Structure with alignment mark and manufacture method for stacking device

Abstract

In accordance with an embodiment, a structure comprises a substrate having a first area and a second area; a through substrate via (TSV) in the substrate penetrating the first area of the substrate; an isolation layer over the second area of the substrate, the isolation layer having a recess; and a conductive material in the recess of the isolation layer, the isolation layer being disposed between the conductive material and the substrate in the recess.

Description

technical field [0001] The present invention relates to a semiconductor process and its formed structure, in particular to an alignment mark manufacturing method and its formed structure. Background technique [0002] In semiconductor processing, the fabrication of structures and devices typically involves sequentially forming one layer of material or composition of materials on top of another. These layers are usually etched or doped using lithography to control the etched or doped regions. For example, forming the source / drain of a transistor may include forming a photoresist layer on a semiconductor substrate in which the source / drain regions are formed. The photoresist layer is exposed such that the photoresist layer over the source / drain regions is removed. The semiconductor layer is doped with a photoresist layer to prevent the unexposed regions from being doped. Moreover, the contact window (contact) of the source / drain region may include: depositing an insulating ...

AI Technical Summary

Problems solved by technology

Misalignment between film layers hinders device operation

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