TFT (thin film transistor) pixel unit
A technology of pixel unit and pixel electrode, which is applied in electrical components, optics, instruments, etc., can solve the problems of decreased light transmittance, loss of aperture ratio, and difficulty in manufacturing and design of TFT liquid crystal displays.
Active Publication Date: 2012-02-01
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology
[0004] However, reducing the channel width usually requires the cooperation of special masks and photoresists, making the design difficult
Increasing the channel range will cause the loss of aperture ratio, which will reduce the light transmittance of TFT liquid crystal display.
Method used
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[0024] In order to make the above objects, features and advantages of the present invention more comprehensible, preferred embodiments of the present invention are exemplified below and described in detail in conjunction with the accompanying drawings. Furthermore, the directional terms mentioned in the present invention, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "side", etc., It is only for orientation with reference to the attached drawings. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention.
[0025] Please refer to figure 2 and image 3 as shown, figure 2 and image 3 They are respectively a partial plan view and a cross-sectional view of a preferred embodiment of the TFT pixel unit of the present invention. The TFT pixel unit of the present invention is applied to a thin film transistor liquid crystal display, comprising a scanning line 10, a fi...
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The invention discloses a TFT (thin film transistor) pixel unit which comprises a scanning line, a first insulating layer, a data line, a source section, a semiconductor layer, a drain section and a pixel electrode. The first insulating layer is arranged on the scanning line and covers the inner side surface of the scanning line. The data line and the scanning line are in insulated stagger with each other to define a pixel area together. The drain section extends out of one side of the data line and is configured on the first insulating layer. The semiconductor layer is arranged on the top surface of the drain section. The source section is arranged on the top surface of the semiconductor layer. The drain section, semiconductor layer and the source section are adjacent to the inner side surface of the scanning line. The pixel electrode is arranged in the pixel area and connected with the source section. The data line, the drain section, the semiconductor layer and the source section form a TFT switch of a longitudinal stack structure, and the loss of aperture ratio is reduced.
Description
【Technical field】 [0001] The invention relates to a pixel unit of a liquid crystal panel, in particular to a TFT pixel unit with a vertical structure. 【Background technique】 [0002] Please refer to figure 1 Shown is a schematic structural diagram of a conventional TFT (thin-film transistor, thin-film transistor) pixel unit. In general, a TFT pixel unit includes a scan line 90, a data line 91, a pixel electrode (not shown in the figure) and a switch unit 93, and the switch unit 93 includes a gate 930, a semiconductor layer 931, a drain 932 and a source 933 . The gate 930 is a part of the scan line 90 . The semiconductor layer 931 is disposed on the gate 930 . The drain 932 extends from one side of the data line 91 and is disposed on the semiconductor layer 931 . The source electrode 933 is disposed on the semiconductor layer 931 and connected to the pixel electrode. Applying an appropriate voltage to the gate 930 can form an electron channel in the semiconductor layer ...
Claims
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IPC IPC(8): G02F1/1362G02F1/1368H01L29/786
CPCG02F2201/40H01L27/124H01L29/78642G02F1/136286
Inventor 康志聪
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD