Static random access memory and static random access memory method

Abstract

A Static Random Access Memory includes at least two memory cells sharing a read bit line and a write bit line. Each memory cell is coupled to a respective read word line and a respective write word line. A write tracking control circuit is coupled to the memory cells for determining a write time of the memory cells. The write tracking control circuit is capable of receiving an input voltage and providing an output voltage. The respective RWL and the respective WWL of each memory cell are asserted during a write tracking operation. The accurate write trace is accomplished.

Description

technical field [0001] The present invention mainly relates to an integrated circuit, in particular to a memory circuit. Background technique [0002] Regarding a Static Random Access Memory (SRAM), a write tracking circuit or an emulation memory cell can be used to determine its writing time. According to the above write time, the width of a word line pulse for a write operation can be determined. In conventional approaches, write tracking circuits or analog memory cells use logic devices located outside of a memory array area when the logic devices and memory cells are at different process, voltage, and temperature (process voltage temperature (PVT) At the same time, traditional write tracking circuits or analog memory cells cannot provide accurate write tracking. In addition, actual memory arrays have different circuit loads (eg, capacitance) and different device characteristics (eg, current, device speed, etc.), so it is difficult to perform accurate write tracking. ...

AI Technical Summary

Problems solved by technology

In conventional approaches, write tracking circuits or analog memory cells use logic devices located outside of a memory array area when the logic devices and memory cells are at different process, voltage, and temperature (process voltage temperature (PVT) Traditional write tracking circuits or analog memory cells cannot provide accurate write tracking

In addition, actual memory arrays have different circuit loads (eg, capacitance), and different device characteristics (eg, current, device speed, etc.), so it is difficult to achieve accurate write tracking

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