High frequency semiconductor device
A semiconductor, high-frequency technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve the problem of increased manufacturing costs, inability to extend the length of gate metal lines and drain metal lines, etc. problem, to achieve the effect of extending the drain metal line
Active Publication Date: 2012-02-01
MITSUBISHI ELECTRIC CORP
View PDF10 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Furthermore, since the wire length is determined univocally according to the type of package as described above, there is a problem that the wire lengths of the gate metal line and the drain metal line cannot be extended.
[0018] In addition, the use of a large package in order to extend the length of the gate metal line and the drain metal line has the problem of hindering compliance with the above-mentioned standards or accompanying an increase in manufacturing cost.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0043] refer to Figure 1 to Figure 7 This embodiment will be described. In addition, the same reference numerals may be given to the same material or the same corresponding structural elements, and multiple descriptions may be omitted.
[0044] figure 1 It is a front view illustrating the high-frequency semiconductor device 10 according to the present embodiment, and also shows the inside of the cavity included in the package for convenience of description. The package 12 is, for example, a nonconductive body such as mold resin. The package 12 has a cavity 16 whose volume is defined by the package 12 and a cover 14 serving as a cover thereof.
[0045] Furthermore, a source frame 20 is disposed on the bottom surface of the cavity 16 . The source frame 20 is an electrical conductor for electrically connecting a semiconductor chip described later to the outside of the high-frequency semiconductor device. The semiconductor chip 13 is arranged at a predetermined position on t...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
To provide a high-frequency semiconductor device that can increase wire lengths of a gate wire and a drain wire. The high frequency semiconductor device includes a package having a cavity, and a semiconductor chip located on bottom surface of the cavity and having a gate electrode, a source electrode, and a drain electrode. Further the high frequency semiconductor device includes a gate frame, a drain frame, and a source frame each located on the bottom surface of the cavity, a gate wire connecting the gate electrode and the gate frame, a drain wire connecting the drain electrode and the drain frame, and a source wire connecting the source electrode and the source frame. Further, the semiconductor chip is spaced from the centre of the bottom surface of the cavity so as to lengthen the gate wire and the drain wire compared to the case of the semiconductor chip is located on the centre of the bottom surface of the cavity.
Description
[0001] This application is a divisional application of: [0002] Invention name: High-frequency semiconductor device [0003] Application date: July 21, 2009 [0004] Application number: 200910151101.8 technical field [0005] The present invention relates to a high-frequency semiconductor device including a semiconductor chip in a package. Background technique [0006] In order to protect the semiconductor chip, the semiconductor chip is sometimes placed on the bottom surface of a cavity included in the package. A part of the frame (lead frame) for enabling the semiconductor chip to communicate with the external high-frequency electric signal is disposed in the cavity. Other portions of the frame extend outwardly of the enclosure. Furthermore, the semiconductor chip is connected to the above-mentioned frame with a gold wire or the like, thereby manufacturing a high-frequency semiconductor device capable of transmitting and receiving high-frequency electric signals while...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/482
CPCH01L2224/48599H01L2224/05553H01L2224/48257H01L2924/16195H01L24/05H01L2224/48227H01L2224/48237H01L2224/49111H01L2224/49051H01L2924/00014H01L2224/4903H01L2224/0603H01L2224/45144H01L2924/01082H01L2924/01033H01L2224/06051H01L24/06H01L2924/01079H01L24/45H01L2224/48465H01L2924/01004H01L2224/48091H01L2224/73265H01L24/49H01L2224/05552H01L24/48H01L2924/01006H01L2224/49171H01L2924/01019H01L2224/04042H01L2224/48247H01L2924/13064H01L2924/181H01L2224/49H01L2224/45H01L2224/48H01L2924/00H01L2224/05556H01L2924/00012
Inventor 川岛庆一细见刚平山敏和
Owner MITSUBISHI ELECTRIC CORP