Electric fuse structure and formation method thereof
A technology of electric fuses and semiconductors, applied in circuits, electrical components, electric solid devices, etc., can solve problems such as unfavorable electromigration of polysilicon layers, affecting the normal operation of electric fuses, and short-circuiting of metal gate layers
Active Publication Date: 2013-04-10
SOI MICRO CO LTD
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Problems solved by technology
[0004] However, with the further shrinking of the size of semiconductor devices, especially in the 45nm and 32nm technology generations, the thickness of the polysilicon layer in the gate structure is required to be thinner and thinner, such as less than 500 Angstroms, and too thin polysilicon layer is not conducive to electromigration implementation, and may even cause the fuse to fail to be implemented
On the other hand, with the introduction of high-k dielectric metal gate technology, the programming process of the electric fuse may cause a short circuit in the metal gate layer, thereby affecting the normal operation of the electric fuse
Method used
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[0018] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.
[0019] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not intended to limit the invention. Furthermore, the present invention may repeat reference numerals and / or letters in different instances. This repetition is for the purpose of simplicity and clarity and does not in itself indicat...
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The invention provides an electric fuse structure and a formation method thereof. The electric fuse structure is arranged on a semiconductor substrate; the semiconductor substrate comprises at least two shallow trench isolations; the electric fuse structure comprises a fusible conductor layer, a cathode and an anode, wherein on the semiconductor substrate, the fusible conductor layer covers the surfaces of the two shallow trench isolations; the cathode and the anode are positioned on the fusible conductor layer; and the cathode and the anode are positioned above the two shallow trench isolations respectively. The electric fuse structure is applicable to integrated circuits with smaller sizes and can be compatible with a high-k-medium metal gate process.
Description
technical field [0001] The invention relates to the field of semiconductor design and technology, in particular to an electric fuse structure and a forming method thereof. Background technique [0002] With the miniaturization and complexity of the semiconductor process, semiconductor components are easily affected by various defects or impurities, and the failure of a single or several metal interconnects, diodes or transistors often leads to the failure of the entire chip. To solve this problem, fuse links (fuse links), ie, fuses, are usually provided in integrated circuits to repair defective circuits and improve the yield of integrated circuit chips. From the working mode, the fuse can be divided into thermal fuse and electric fuse (eFuse). Wherein, the electric fuse uses the principle of electro-migration to cause the fuse to break, that is, to program the electric fuse. [0003] A typical electric fuse structure in the prior art is as figure 1 As shown, it includes:...
Claims
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IPC IPC(8): H01L23/525H01L21/768
Inventor 闫江
Owner SOI MICRO CO LTD