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Boosting transistor performance with non-rectangular channels

A technology of transistors and channels, applied in the direction of electric solid-state devices, semiconductor devices, special data processing applications, etc., can solve the problem of destroying the shape of rectangular channels

Inactive Publication Date: 2012-02-29
SYNOPSYS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, it can be seen that due to the tight polysilicon spacing, the rounded corners 128, 130 and 132 extend into the transistor channel and disrupt the expected rectangular channel shape

Method used

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  • Boosting transistor performance with non-rectangular channels
  • Boosting transistor performance with non-rectangular channels
  • Boosting transistor performance with non-rectangular channels

Examples

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Embodiment Construction

[0024] The following description is given to enable any person skilled in the art to make and use the invention, and is provided in the context of a particular application and its requirements. Various modifications to the disclosed embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the invention. Thus, the intention is not to limit the invention to the embodiments shown, but to give the invention the widest scope consistent with the principles and features disclosed herein.

[0025] definition

[0026] In order to best describe embodiments of the invention, reference will be made to Figure 1A An example layout section is shown in . Figure 1A illustrates a plan view of the layout area, and Figure 1B illustrated in the Figure 1A taken from the line A-A' shown in Figure 1A A cross-sectional view of a portion of an in...

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PUM

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Abstract

Roughly described, the invention includes layouts and masks for an integrated circuit, in which the diffusion shape for a transistor includes a transversely extending jog on one or both transversely opposite sides, the jog having inner and outer corners, at least one of which is located relative to the gate conductor longitudinally such that during lithographic printing of the diffusion shape onto the integrated circuit, the corner will round and extend at least partly into the channel region. The invention also includes aspects for a system and method for introducing such jogs, and for an integrated circuit device having a non-rectangular channel region, the channel region being wider where it meets the source region than at some other longitudinal position under the gate.

Description

Background technique [0001] As semiconductor fabrication processes continue to shrink, evolving lithographic equipment, optical proximity correction methods, and increasingly restrictive design rules generally do a good job of maintaining desired transistor shapes and especially desired dimensions. However, continued layout scaling combined with undesired effects such as line edge roughness presents increasingly disturbing issues related to transistor performance variability for technology nodes below 45nm. [0002] Specifically, when several transistors with different channel widths are arranged next to each other, the edges in the active layer become more and more curved, and as the gate length approaches below 30nm and the channel width approaches between 100nm Next, the line edge roughness is no longer evenly distributed across the channel. Conversely, line edge roughness affects active layer bowing in addition to optical proximity effects and etch bias effects. [0003]...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L29/10H01L21/266G06F17/50
CPCH01L21/266H01L27/0207H01L29/1033H01L29/41758G06F30/392
Inventor V·莫罗茨崔文纲林锡伟
Owner SYNOPSYS INC