Silicon-on-insulator N-channel metal oxide semiconductor (SOI NMOS) total dosage radiation model building method

A technology of total dose irradiation and modeling method, which is applied in the field of SOI NMOS total dose irradiation modeling, can solve the problems of difficult parameter extraction and complex parameter extraction in software, and achieve the effect of simple and efficient modeling.

Active Publication Date: 2014-04-02
北京中科微投资管理有限责任公司
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Problems solved by technology

[0006] In order to solve the problems of complicated extraction of parameters in the existing modeling method, difficulty in using reference-raising software to realize parameter extraction, etc., the present invention provides a SOI NMOS total dose irradiation modeling method, the method comprising:

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  • Silicon-on-insulator N-channel metal oxide semiconductor (SOI NMOS) total dosage radiation model building method
  • Silicon-on-insulator N-channel metal oxide semiconductor (SOI NMOS) total dosage radiation model building method
  • Silicon-on-insulator N-channel metal oxide semiconductor (SOI NMOS) total dosage radiation model building method

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[0029] In order to deeply understand the present invention, the present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0030] see figure 1 and figure 2 , the embodiment of the present invention provides a SOI NMOS total dose radiation reference enhancement modeling method, including the following steps:

[0031] Step 101: measuring SOI NMOS data before irradiation to obtain drain current-gate voltage curves under different bulk voltages and drain current-drain voltage curves under different gate voltages;

[0032] In this embodiment, the semiconductor parameter tester 4200 is used for measurement, and the measured data is used as the basic data for subsequent establishment of the total radiation dose model;

[0033] Step 102: Use the reference promotion software MBP to extract parameters from the SOI NMOS pre-irradiation data to obtain SOI NMOS pre-irradiation model parameters;

[0034] First, choose a ...

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Abstract

The invention discloses a silicon-on-insulator N-channel metal oxide semiconductor (SOI NMOS) total dosage radiation model building method, which belongs to the technical field of parameter extraction and model building. The method comprises the following steps of: obtaining model parameters before SOI NMOS radiation, adding parameter relevant to the total dosage to the model parameters and forming the SOI NMOS total dosage radiation model containing unknown parameters; and obtaining values of the unknown parameters in the SOI NMOS total dosage radiation model and forming the final total dosage radiation model. Through the model building method, the total dosage radiation model is more overall and reliable, and in addition, the automation on the newly added model parameter extraction is also realized by the method, so the complicated parameter extraction and model building become simpler and more efficient.

Description

technical field [0001] The present invention relates to the field of reference modeling technology, in particular to a SOI NMOS total dose radiation modeling method. Background technique [0002] The quality of integrated circuit design depends strongly on the device model parameters used, so it is very important to extract a good set of model parameters. A good set of model parameters requires accuracy, speed, good convergence, and easy extraction of parameters. People have done a lot of research on the models of semiconductor devices under normal conditions. The existing models include BSIM, PSP, HISIM, EKV and so on. Moreover, the current commercial referral software can also automatically extract these standard models. [0003] The total dose effect refers to the phenomenon that when the device is continuously exposed to ionizing radiation, the threshold voltage of the device drifts, the transconductance decreases, the subthreshold current increases, and the low-freque...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 卜建辉毕津顺韩郑生
Owner 北京中科微投资管理有限责任公司
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