Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for forming contact hole

A contact hole and plasma technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of poor contact hole shape and excessive loss of metal silicide, and achieve shape improvement and loss reduction Effect

Active Publication Date: 2014-04-02
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The problem to be solved by the present invention is that the method for forming a contact hole in the prior art has a bad shape of the formed contact hole and causes too much loss of metal silicide on the substrate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for forming contact hole
  • Method for forming contact hole
  • Method for forming contact hole

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] In the method for forming a contact hole of the present invention, after forming a contact hole, first bombard the surface of the contact hole with oxidizing plasma to remove the polymer on the surface (bottom and sidewall) of the contact hole, and remove the bottom and sidewall of the contact hole When the polymer is used, the oxidizing plasma oxidizes the metal silicide at the bottom of the contact hole, and also oxidizes the sidewall to corrode the sidewall; after removing the polymer, bombard the surface of the contact hole with reducing plasma , the oxidized metal silicide at the bottom of the contact hole is reduced, so the metal silicide is not lost, at least the loss is reduced, and the oxidized sidewall is also reduced, so that the morphology of the contact hole is improved.

[0030] In order to enable those skilled in the art to better understand the present invention and make the present invention clearer, the specific implementation manners of the present inv...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for forming a contact hole, comprising the following steps of: providing a substrate, metal silicide being formed on the substrate and a dielectric layer being formed on the metal silicide; forming a contact hole in the dielectric layer, a polymer being formed in the contact hole; bombing the surface of the contact hole by oxidizing plasma to remove the polymer from the surface of the contact hole; and after removing the polymer, bombing the surface of the contact hole by reducing plasma. According to the invention, because the surface of the contact hole is bombed by the oxidizing plasma firstly to remove the polymer from the surface of the contact hole, and then the surface of the contact hole is bombed by the reducing plasma, the metal silicide can not lose or at least loses less, and the pattern of the contact hole is improved.

Description

technical field [0001] The invention relates to a semiconductor process, in particular to a method for forming a contact hole. Background technique [0002] With the development of integrated circuits to ultra-large scale integrated circuits, the circuit density inside integrated circuits is increasing, and the number of components contained is also increasing. In semiconductor integrated circuits, metal oxide semiconductor (Metal Oxide Semiconductor, MOS) transistors are one of the most important components. With the further development of semiconductor integrated circuits, the size of semiconductor components is also reduced. The process of MOS transistors There are also many improvements. [0003] The existing MOS transistor process is to form a gate structure on a semiconductor substrate, form a lightly doped drain structure (Lightly Doped Drain, LDD) in the substrate on opposite sides of the gate structure, and then form a lightly doped drain structure (LDD) on the sid...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
Inventor 王新鹏黄敬勇
Owner SEMICON MFG INT (SHANGHAI) CORP