MOSFET reliability test analysis system and method thereof

A test analysis and reliability technology, applied in the field of measurement and analysis, to achieve the effect of simple operation steps

Active Publication Date: 2012-03-28
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to solve the problem of not adopting the method of carrying out the accelerated deg

Method used

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  • MOSFET reliability test analysis system and method thereof
  • MOSFET reliability test analysis system and method thereof
  • MOSFET reliability test analysis system and method thereof

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0046] The specific implementation mode is combined below figure 1 Describe this embodiment mode, a kind of MOSFET reliability test and analysis system it comprises:

[0047] MOSFET degradation experiment environment simulation box 1: set MOSFET in this box, and accelerate the aging process of MOSFET by simulating high temperature, low temperature and harsh humidity environment;

[0048] MOSFET static parameter tester 2: connect the MOSFET to be tested, and measure the threshold voltage, transconductance and channel resistance of the MOSFET in the simulated temperature and humidity environment in the MOSFET degradation experiment environment simulation box 1;

[0049] Lower computer 3: connected with MOSFET static parameter tester 2, used to collect threshold voltage, transconductance and channel resistance data measured by MOSFET static parameter tester 2;

[0050] Host computer 4: connected with the lower computer to control the opening and closing time of the lower compute...

specific Embodiment approach 2

[0052] Specific implementation mode two: the following combination Figure 1 to Figure 14 Describe the present embodiment, described MOSFET static parameter measurement method, the steps are as follows:

[0053] Step 1: Put the MOSFET in the simulation box of the MOSFET degradation experiment environment, set the temperature and humidity required for the accelerated life experiment in the host computer, and schedule the number of tests;

[0054] Step 2: Send the collected data to the host computer;

[0055] Step 3: The upper computer calculates the static parameter value according to the static parameter calculation formula and the adjustment part enlargement and reduction ratio;

[0056]Step 4: Store the data of MOSFET static parameters in a text file;

[0057] Step 5: The upper computer regularly starts the lower computer according to the predetermined test time interval, and if the predetermined number of tests is reached, it will display that the test is completed.

[0...

Embodiment

[0061] According to the MOSFET static parameter test method that is used for reliability research according to the present invention, a group of MOSFET reliability test analysis examples are provided as follows:

[0062] The MOSFET used in the measurement example selects IRF740 from IR Company. Connect the MOSFET to the incubator with a long wire to add temperature stress. Different circuits are connected to the reserved interfaces in the chassis to provide voltage and current stress. The measurement steps are as follows:

[0063] Step 1: Start the constant temperature and humidity box, set the temperature and humidity on the host computer, and wait for the temperature and humidity displayed by the constant temperature box to reach the set value;

[0064] Step 2: Set the voltage stress and current stress, and turn on the power supply of the MOSFET static parameter tester;

[0065] Step 3: Set the test number, sample model, measurement time interval and measurement times in ...

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Abstract

The invention provides a MOSFET static parameter test method of an MOSFET reliability test analysis system, belonging to the measurement and analysis technology field. In the prior art, a method of carrying out an acceleration degeneration life test under a simulated severe environment to detect MOSFET reliability in real time continuously is not employed. The MOSFET reliability test analysis system comprises an MOSFET degeneration experiment environment simulation case, an MOSFET static parameter tester, a lower computer, a host computer and a PC machine. The static parameter tester measures threshold voltage, transconductance and channel resistance of an MOSFET in the degeneration experiment environment simulation case. The method comprises the following steps: the MOSFET is placed in the degeneration experiment environment simulation case, temperature and humidity which are needed in an acceleration life experiment are set in the host computer, test times is predetermined, and the host computer carries out calculation, storage and analysis on acquired data. The system and the method are used for assessing reliability of the MOSFET.

Description

technical field [0001] The invention relates to a MOSFET reliability testing and analysis device and method, belonging to the technical field of measurement and analysis. Background technique [0002] Due to the advantages of good thermal stability, large safe operating area, and fast switching speed, MOSFETs are widely used in electronic devices for analog and digital circuits. In recent years, MOSFETs have been widely used in power supplies, computers and peripherals, communication devices, electronics and industrial control and other fields. As an important device in the field of power electronics, the reliability of MOSFET has an important impact on the reliability of the system. [0003] A large amount of experience, data and principle analysis show that the change of threshold voltage, channel resistance and other parameters of MOSFET and the drift of transfer characteristic curve can accurately reflect the degradation effect of MOSFET, reflect the change of its inter...

Claims

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Application Information

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IPC IPC(8): G01R31/26
Inventor 翟国富陈世杰叶雪荣韩笑李求洋李岱霖胡汇达苏博男蒙航薛升俊马跃谭榕容邵雪瑾李享周月阁
Owner HARBIN INST OF TECH
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