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In-chip integrated low noise amplifier

A low-noise amplifier, integrated technology, applied in the direction of improving the amplifier to reduce the influence of noise, etc., can solve the problems of occupying a large chip area and the low-noise amplifier cannot be fully integrated.

Active Publication Date: 2012-03-28
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the disadvantages that the traditional source inductance negative feedback structure low noise amplifier cannot be fully integrated at a frequency of 915MHz, and the number of inductors used takes up a large chip area, and a new type of low noise amplifier structure is proposed.

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Embodiment Construction

[0036] The present invention will be further described below in conjunction with the accompanying drawings and through embodiments.

[0037] exist image 3 In the LNA shown using the voltage parallel negative feedback structure as the input stage, R S is the source input impedance, C B It is the DC blocking capacitor of the input port, and the input port needs to realize a matching network with 50 ohms, and the parasitic capacitance C of the diode with ESD protection also needs to be considered 1 =0.4pF, and the parasitic inductance L brought by the bonding wire 1 = 1.5nH.

[0038] The power supply voltage VDD is 1.2V.

[0039] NMOS transistor MN 0 , PMOS transistor MP 0 and the feedback resistor R F constitutes a low-impedance path, taking 915MHz as an example, the required inductance L 2 and the required compensation capacitor C C . image 3 C in C and figure 2 C in 2 are not equal, the following relationship exists:

[0040] C 2 =C ...

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Abstract

The invention discloses an in-chip integrated low noise amplifier and relates to a chip design technology in the field of integrated circuits. The low noise amplifier is applied to the radio frequency front end of a receiver. The circuit disclosed by the invention can be divided into a signal input network part, an amplifier part and a noise offsetting part, and full integration can be achieved at the frequency of 915MHz. According to the invention, a voltage parallel-connection negative feedback structure is used as a part of input impedance network matching, has low input impedance characteristic and is convenient for regulating the impedance matching; the in-chip integrated low noise amplifier is designed by combining the noise offsetting technique of the low noise amplifier, low output impedance characteristic of a short-channel device and good frequency selection characteristic of a narrow-band low noise amplifier in the circuit, and the number of inductors used in the circuit is less, thereby reducing the area of a chip, being convenient for integration and reducing the cost. Thus, the in-chip integrated low noise amplifier disclosed by the invention is an ideal integrated low-noise amplifier.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, and is an integrated low-noise amplifier applied to a radio frequency front end of a receiver. Background technique [0002] With the rapid development of information technology, more and more wireless products have been widely used in the market. As the first stage of the RF receiver, the low-noise amplifier needs to provide enough gain to overcome the noise brought by the subsequent circuit. The noise amplifier itself should have sufficiently low noise and large enough gain. On the other hand, in order to receive large signals without distortion, the low-noise amplifier is required to have good linearity, so the performance of the low-noise amplifier determines to a large extent The noise performance of the whole receiver is crucial in its position in the field of radio frequency communication. Noise figure, reflection coefficient, linearity, gain, power consumption, etc. are impo...

Claims

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Application Information

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IPC IPC(8): H03F1/26
Inventor 刘洋于奇张小龙杨帆彭媛孙明远
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA