Manufacture method of flash memory

Abstract

The invention provides a manufacture method of a flash memory. The method comprises the following steps: providing a semiconductor structure, wherein the semiconductor structure comprises a memory cell array and a periphery circuit region, the memory cell array and the periphery circuit region are in a gate structure respectively; forming insulation sidewalls on the gate structure surfaces of the memory cell array and the periphery circuit region; forming a sacrifice sidewall on the insulation sidewall surface of the periphery circuit region only and carrying out ion doping process, so as to form an active region of the periphery circuit region. With the adoption of the sacrifice sidewall on the insulation sidewall surface of the periphery circuit region, the requirement on device pressure resistance during ion doping process of the periphery circuit region is met, so that a process window for forming the insulation sidewall is enlarged and the yield is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a flash memory. Background technique [0002] In the current semiconductor industry, integrated circuits can be divided into three main types: analog integrated circuits, digital integrated circuits and digital / analog hybrid integrated circuits. As an important type of digital integrated circuits, storage devices, especially flash memory (flash memory, referred to as flash memory) are developing rapidly, mainly because flash memory can store information for a long time without power on, and has a high degree of integration. , fast access speed, easy to erase and rewrite, etc. [0003] Chinese patent No. ZL99106789.4 discloses a flash memory and a manufacturing method thereof. Such as figure 1 As shown, the existing flash memory is divided according to the device area, and usually includes two parts of the memory cell array area I ...

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Problems solved by technology

[0004] The existing flash memory manufacturing process has the following disadvantages: after the sidewall of the gate 2 is formed in the peripheral circuit region II, an ion doping process is required to make active regions such as source / drain electrodes. The above ion doping process requires With a higher operating voltage, in order to improve the withstand voltage of the device, the thickness of the sidewall of the gate 2 is also required to be relatively large

The above different requirements for sidewall thickness lead to a smaller process window of the sidewall formation process in the existing flash memory manufacturing method, which in turn affects the yield of the product

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