Vertical Zener diode structure and preparation method thereof

A technology of Zener diodes and injection regions, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of clamping circuit reliability, Zener breakdown value drift, product failure, etc., and improve product quality. Reliability, the effect of improving the drift of Zener breakdown value
CN102412307AInactive Publication Date: 2012-04-11SHANGHAI HUA HONG NEC ELECTRONICS
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI HUA HONG NEC ELECTRONICS
Publication Date
2012-04-11
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a vertical Zener diode structure. The vertical Zener diode structure is characterized in that N-type injection areas and P-type injection areas of a Zener diode are positioned in an N trap of an epitaxial layer; and the P-type injection areas and the N-type injection areas are arranged downwards in sequence from the silicon surface in a staggered manner. The Zener breakdown point of the vertical Zener diode structure is far away from the silicon surface, so that the drift problem of the Zener breakdown value is improved. The invention also discloses a preparation method of the vertical Zener diode structure.
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Description

technical field

[0001] The present invention relates to a vertical Zener diode structure. The invention also relates to a preparation method of the vertical Zener diode structure. Background technique

[0002] Traditional Zener diodes are formed by using a ring of N-type implants on the silicon surface surrounded by P-type implants. In the working state of the Zener diode with the above structure, because some carriers in the Zener breakdown will be captured by the silicon surface, the Zener breakdown value will have a relatively large drift, resulting in a reliability problem in the clamping circuit, which is serious. will cause the product to fail. Contents of the invention

[0003] The technical problem to be solved by the present invention is to provide a vertical Zener diode device structure, which can improve the reliability of the Zener diode device.

[0004] In order to solve the above-mentioned technical problems, in the vertical Zener diode structure of the pr...

Claims

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