Apparatus and system for cleaning substrate

[0015] preferred embodiment

[0016] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail in order not to unnecessarily obscure the present invention.

[0017] Substrates referred to herein mean, but are not limited to, semiconductor wafers, hard drive disks, optical disks, glass substrates, flat panel display surfaces, and liquid crystal display surfaces, etc., which may be contaminated during manufacturing or processing operations. Depending on the actual substrate, surfaces can be contaminated in different ways, and acceptable levels of contamination are defined in the particular industry in which the substrate is processed. For ease of discussion, substrate contamination is described herein by the presence of contaminant particles on the substrate surface. However, it should be recognized that the contaminant particles referenced herein may take the form of substantially any type of contaminant that may contact a substrate during substantially any substrate processing and handling operation.

[0018] In various embodiments, the devices, systems, and methods disclosed herein can be used to clean contaminant particles from patterned and non-patterned substrates and the like. In the case of a patterned substrate, the protruding structures on the surface of the patterned substrate to be cleaned may correspond to protruding lines such as polysilicon lines or metal lines. Additionally, the patterned substrate surface to be cleaned may include recessed features such as recesses resulting from a chemical mechanical polishing (CMP) process.

[0019] Figure 1A A system for cleaning contaminants from a substrate is shown in accordance with one embodiment of the present invention. The system includes a chamber 100 defined by a closed wall 101 . Chamber 100 includes an input module 119 , a processing module 121 and an output module 123 . The substrate carrier 103 and corresponding drive means are defined to provide linear movement of the substrate 102 from the input module 119 through the processing module 121 to the output module 123 as indicated by arrow 107 . Drive track 105A and guide track 105B are defined to provide controlled linear motion of substrate carrier 103 to maintain substrate 102 in a substantially horizontal orientation along the linear path defined by drive track 105A and guide track 105B.

[0020] The input module 119 includes a door assembly 113 through which the substrate 102 can be inserted into the chamber 100 by the substrate processing apparatus. The input module 119 also includes a substrate lifter 109 defined to move vertically through the open area of ​​the substrate carrier 103 when the substrate carrier 103 is positioned above and centered on the lifter 109 in the input module 119 . When a substrate 102 is inserted into the chamber 100 through the door assembly 113 , the substrate lifter 109 may be raised to receive the substrate 102 . The substrate lifter 109 may then be lowered to place the substrate 102 on the substrate carrier 103 and out of the straight path of travel of the substrate carrier 103 .

[0021] The processing module 121 includes an upper processing head 117 arranged to process the upper surface of the substrate 102 as the substrate carrier 103 with the substrate 102 placed thereon moves past under the head of the upper processing head 217 . Processing module 121 also includes lower processing head 118 (see Figure 1B ), which is disposed opposite the upper processing head 117 below the linear movement path of the substrate carrier 103 . Lower processing head 118 is defined and positioned to process the bottom surface of substrate 102 as substrate carrier 103 moves through processing module 121 . The upper processing head 117 and the lower processing head 118 each have a leading edge 141 and a trailing edge 143 such that the substrate carrier 103 moves the substrate 102 along a linear path from the leading edge 141 to the trailing edge 143 during a processing operation. As discussed in detail below, with respect to the present invention, each of the upper processing head 117 and the lower processing head 118 is defined to perform a multi-stage cleaning process on the upper and lower surfaces of the substrate 102, respectively.

[0022] It should be understood that in some embodiments, one or more additional processing heads may be used with the upper processing head 117 above the linear path of travel of the substrate carrier 103, and/or one or more additional processing heads may be used with the lower processing head 117. The processing head 118 is used together below the straight path of travel of the substrate carrier 103 . For example, processing heads defined to perform a drying process of the substrate 102 may be positioned behind the trailing edges of the upper processing head 117 and the lower processing head 118 , respectively.

[0023] Once the substrate carrier 103 has moved through the processing module 121 , the substrate carrier 103 reaches the output module 115 . The output module 115 includes a substrate lifter 111 defined to move vertically through the open area of ​​the substrate carrier 103 when the substrate carrier 103 is positioned above and centered on the lifter 111 in the input module 111 . The substrate lifter 111 can be lifted to lift the substrate 102 from the substrate carrier 103 to a position for retrieval from the chamber 100 . The export module 111 also includes a door assembly 115 through which the substrates 102 may be retrieved from the chamber 100 using the substrate processing apparatus. Once the substrate 102 is retrieved from the substrate lifter 111 , the substrate lifter 111 may be lowered to clear the straight path of travel of the substrate carrier 103 . The substrate carrier 103 is then transported back to the input module 119 to retrieve the next substrate for processing.

[0024] Figure 1B A vertical cross-sectional view of chamber 100 is shown with substrate carrier 103 below upper processing head 117 and above lower processing head 118 in accordance with one embodiment of the present invention. The upper processing head 117 is mounted to the drive rail 105 and the guide rail 105 such that the vertical position of the upper processing head 117 indexes the vertical position of the drive rail 105 and the vertical position of the guide rail 105, thereby indexing the substrate carrier 103 and all components thereon. The vertical position of the supported substrate 102 .

[0025] The upper processing head 117 is defined to perform a cleaning process on the upper surface of the substrate 102 while the substrate carrier 103 moves the substrate 102 beneath it. Similarly, the lower processing head 118 is defined to perform a rinse process on the lower surface of the substrate 102 as the substrate carrier 103 moves the substrate 102 thereon. In various implementations, each of upper processing head 117 and lower processing head 118 in processing module 121 may be defined to perform one or more substrate processing operations on substrate 102 . Furthermore, in one embodiment, the upper processing head 117 and the lower processing head 118 in the processing module 121 are defined to span the diameter of the substrate 102 such that one pass of the upper/lower processing head 117/118 under/on the substrate carrier 103 By this, the entire upper/lower surface of the substrate 102 will be processed.

[0026] Figure 2A An isometric view of an upper machining head 117 according to one embodiment of the invention is shown. The upper processing head 117 includes two substantially identical modules, a first upper surface module 117A and a second upper surface module 117B. The first upper surface module 117A has an effective leading edge 201A and an effective trailing edge 203A. The second upper surface module 117B has an effective leading edge 201B and an effective trailing edge 203B. The top of the substrate to be cleaned will pass sequentially under the first upper surface module 117A and the second upper surface module 117B in a direction extending from the leading edge 141 to the trailing edge 143 of the upper processing head 117 . Thus, during processing, the substrate will pass under the first upper surface module 117A in a direction extending from the effective leading edge 201A to the effective trailing edge 203A. Then, the substrate passes under the second upper surface module 117B in a direction extending from the effective leading edge 201B to the effective trailing edge 203B.

[0027] In one embodiment, the second upper surface module 117B is defined to be substantially identical to the first upper surface module 117A. The second upper surface module 117B is continuous with the first upper surface module 117A in the upper processing head 117A such that the effective leading edge 201B of the second upper surface module 117B is relative to the substrate under the upper processing head 117 during the processing process. The direction of travel is placed behind the effective trailing edge 203A of the first upper surface module 117A. Furthermore, in one embodiment, the first upper surface module and the second upper surface module 117A/117B are independently controllable. However, in another embodiment, the first upper surface module and the second upper surface module 117A/117B may be jointly controlled.

[0028] Figure 2B A vertical cross-section of the upper machining head 117 is shown, cut perpendicularly between its leading edge 141 and trailing edge 143, in accordance with one embodiment of the present invention. Various features of the upper processing head 117 head discussed in this paper can be referred to Figure 2A and 2B. The upper processing head 117 may be defined from substantially any type of material, such as plastic, metal, etc., that is compatible with the semiconductor wafer cleaning process and the chemicals used in the cleaning process and that can be formed into the configuration disclosed herein.

[0029] The first upper surface module 117A includes a row of cleaning material dispensing ports 209A defined along the active front edge 201A. The second upper surface module 117B also includes a row of cleaning material dispensing ports 209B defined along the active front edge 201B. Each row of cleaning material dispensing ports 209A/209B is defined to dispense a layer of cleaning material down onto the substrate underlying it. Cleaning material dispensing ports 209A/209B are connected to respective cleaning material supply flow networks as described in co-pending US Patent Application No. 12/165,577, which is incorporated herein in its entirety. The cleaning material dispensing ports 209A/209B and their associated cleaning material supply flow network are configured to minimize the form factor of the upper processing head 117 while ensuring a substantially uniform manner across the substrate passing under the cleaning material dispensing ports 209A/209B. Apply cleaning material.

[0030] In one embodiment, the cleaning material dispensing ports 209A/209B are defined as rows of discrete ports, such as holes. In another embodiment, the cleaning material dispensing ports 209A/ 209B are defined as one or more slots extending along the length of the upper processing head 117 . In one embodiment, cleaning material dispensing ports 209A/209B are defined to operate at substrate carrier speeds of up to about 60 millimeters per second (mm/s) and correspondingly low cleaning material consumption of about 25 milliliters per substrate (mL/substrate). Provides substantially uniform and complete coverage to the substrate. Also, the cleaning material dispensing ports 209A/209B and their associated cleaning material supply flow network can operate with many different cleaning materials having different chemistries.

[0031] In one embodiment, the cleaning materials referenced herein may include one or more viscoelastic materials to capture contaminants present on the substrate surface. In an example embodiment, a viscoelastic material is defined as a high molecular weight polymer. In another example embodiment, the cleaning material is a gel-like polymer. In yet another example embodiment, the cleaning material is a sol, ie a colloidal suspension of solid particles in a liquid. In yet another embodiment, the cleaning material is a liquid solution. Contaminant particles on the substrate are trapped in chains/networks of viscoelastic components of the cleaning material. When the cleaning material on the substrate is removed by rinsing, the contaminant particles trapped in the cleaning material are removed from the substrate. Some exemplary cleaning materials suitable for use with the systems disclosed herein are described in co-pending US Patent Application No. 12/131,654, which is incorporated herein in its entirety.

[0032] The first upper surface module 117A includes a row of flushing material dispensing ports 211A defined along the active trailing edge 203A. The second upper surface module 117A also includes a row of flushing material dispensing ports 21 IB defined along the active trailing edge 203B. Each row of rinsing material dispensing ports 211A/211B is defined to dispense rinsing material down onto the substrate immediately below it. In one embodiment, each port in the row of flushing material dispensing ports 211A/211B is defined to have a diameter of about 0.03 inches, and the corresponding ports in the row of flushing material dispensing ports 211A/211B Adjacent ports are separated by a center-to-center distance of about 0.125 inches. However, it should be understood that in other embodiments, the rows of flushing material dispensing ports 211A/211B may be defined with different sizes and spacings so long as flushing material is dispensed therefrom in a suitable manner. Furthermore, in one embodiment, the rows of flushing material row dispensing ports 211A/211B may be defined to extend in rows along the effective rear edges 203A/203B of the first and second upper surface modules 117A/117B. One or more slots for .

[0033] In one embodiment, the rows of flushing material dispensing ports 211A/211B and their associated flushing material supply flow network are defined to extend from about 1 liter per minute (L/min) to about 4 L/min. The flow rate within dispenses flushing material. In addition, flushing material dispense ports 211A/21B and their associated flushing material supply flow network can operate with many different flushing materials having different chemistries. The flushing material should be chemically compatible with the cleaning material and the substrate to be cleaned. In one embodiment, the rinse material is deionized water (DIW). However, in other embodiments, the flushing material can be one of many different materials in a liquid state, such as dimethylsulfoxide (DMSO), dimethylformamide (DMF), divinyl acetate (DMAC) , a polar solvent that is readily miscible with DIW, an atomizing liquid such as an atomizing polar solvent (eg, DIW), or any combination thereof. It should be understood that the above-identified flushing materials are provided by way of example and do not represent an inclusive set of flushing materials.

[0034] As will be discussed further below, a flushing meniscus is formed between each of the first and second upper surface modules 117A and 117B and the substrate, respectively. In each of the first and second upper surface modules 117A and 117B, the row of flushing material dispensing ports 211A/211B supplies flushing material on the trailing side of the flushing meniscus, while the first row of Vacuum ports 217A/217B remove liquid on the leading side of the flushing meniscus. Because the first row of vacuum ports 217A/217B is provided on the leading side of the flushing meniscus rather than on both the leading and trailing sides, the ports in the row of flushing fluid supply ports 211A/211B are in the form of Angled downward toward the first row of vacuum ports 217A/217B. More specifically, each port in the row of flushing material dispensing ports 211A/211B is defined to be angled downward in a direction extending from the effective trailing edge 203A/203B to the effective leading edge 201A/201B.

[0035] Due to the angle of the flushing material dispensing ports 211A/211B, the flushing material is dispensed with sufficient hydraulic power to overcome the drag induced by the movement of the substrate towards the effective trailing edge 203A/203B such that the flushing material is pushed through the flushing fluid meniscus. To the row of vacuum ports 217A/217B on the leading side of the flushing meniscus. Furthermore, it should be understood that the angle of the ports in the row of flushing material dispensing ports 211A/211B is defined to reduce the pressure of the flushing material at the effective trailing edge 203A/203B to help confine most of the flushing material meniscus . In one embodiment, the angle between the centerline of the ports in the row of flushing material dispensing ports 211A/211B and the vertical vector is defined to be in the range extending upwardly to about 45 degrees. In one particular embodiment, the angle between the centerline of the openings in the row of flushing material dispensing openings 211A/211B and the vertical vector is on the order of 20 degrees.

[0036] The first upper surface module 117A includes a first row of vacuum ports 217A defined between the row of vent ports 213A and the row of flushing material dispensing ports 211A. The second upper surface module 117B includes a first row of vacuum ports 217B defined between the row of vent ports 213B and the row of flushing material dispensing ports 211B. In each of the first upper surface module and the second upper surface module 117A/117B, the first row of vacuum ports 217A/217B is arranged to substantially bisect the effective leading edge 201A/201B and the effective trailing edge 203A, respectively. Total separation distance between /203B.

[0037] Each first row of vacuum ports 217A/217B is defined to provide multi-phase extraction of cleaning and rinsing materials on the substrate while the substrate is present therebeneath and air supplied through the row of vents 213A/213B. Suck. In one embodiment, in each of the first upper surface module and the second upper surface module 117A/117B, a first row of vacuum ports 217A/217B and its associated vacuum supply network are defined to provide Fluid suction flow rates in the range of about 250 standard liters per minute (SLM) to 550 SLM. It should be understood that the suction provided through the first row of vacuum ports 217A/217B is limited to such a suction that does not cause the substrate to be drawn onto the upper processing head 117 .

[0038] It should be understood that at a fixed total suction flow or a fixed total suction cross-sectional area, lower vacuum ports may be used where flushing material may block the vacuum port and destabilize the interface between flushing material, cleaning material, and air. Size limitations exist. It should also be understood that at a fixed total suction flow or a fixed total suction cross-sectional area, there is a limitation on the size of the upper vacuum port where cleaning material may leak between the vacuum ports due to insufficient suction between the vacuum ports. exist. The size of the vacuum port should be small enough to reduce the distance between adjacent vacuum ports to avoid leakage of cleaning material between the vacuum ports; but not so small that the vacuum port will be blocked by the cleaning material.

[0039]In one embodiment, each port in the first row of vacuum ports 217A/217B is defined to have a diameter of about 0.04 inches, and adjacent ports in the first row of vacuum ports 217A/217B are defined by The separation was about 0.0625 inches center to center. In yet another embodiment, each port in the first row of vacuum ports 217A/217B is defined to have a diameter of about 0.06 inches, and adjacent ports in the first row of vacuum ports 217A/217B are spaced at a center-to-center distance of about 0.125 inches. However, it should be understood that in other embodiments, the first row of vacuum ports 217A/217B may be defined as having the same specific embodiment as mentioned herein, as long as the suction provided thereby is suitable for the operation of the upper processing head 117. Different sizes and spacing. Also, in one embodiment, the first row of vacuum ports 217A/217B may be defined as one or more slots.

[0040] The first upper surface module 117A includes a defined flush meniscus region 223A defined between the first row of vacuum ports 217A and the active trailing edge 203A such that the protruding frame 221A includes approximately The leading part of the preceding half and the trailing part of the trailing half. The second upper surface module 117B includes areas defined to limit the flushing meniscus region 223B between the first row of vacuum ports 217B and the active trailing edge 203B such that the protruding frame 221B includes approximately The leading part of the preceding half and the trailing part of the trailing half.

[0041] In each of the first upper surface module and the second upper surface module 117A/117B, a first row of vacuum ports 217A/217B is defined to bisect the leading edge of the leading portion of the protruding frame 221A/221B. The trailing edge of the trailing portion of the protruding frame 221A/221B is the effective trailing edge 203A/203B of the first and second upper surface modules 117A/117B. Also, in each of the first upper surface module and the second upper surface module 117A/117B, rows of flushing material dispensing ports 211A/211B are defined as flushing meniscus near the trailing portion of the protruding frame 221A/221B. within face region 223A/223B.

[0042] The trailing portion of the protruding frame 221A/221B is defined to provide a physical confinement of the majority of the meniscus irrigation material present in the irrigation meniscus region 223A/223B. Also, the trailing portion of the protruding frame 221A/221B is defined to leave a uniform thin layer of rinse material on the substrate as it emerges from beneath the first and second upper surface modules 117A/117B. The trailing portion of the protruding frame 221A/221B provides a local increase in hydraulic resistance and serves to keep most of the flushing material meniscus within the flushing meniscus region 223A/223B.

[0043] In one embodiment, the protruding frame 221A/221B protrudes approximately 0.02 inches downward from the level of the upper processing head 117 within the rinse meniscus region 223A/223B. However, it should be understood that in other embodiments, the protruding frame 221A/ 221B may protrude different distances from the level of upper processing head 117 within flushing meniscus region 223A/223B.

[0044] The first upper surface module 117A includes a row of vent openings 213A defined along a trailing side 215A of the row of cleaning material dispensing openings 209A. The second upper surface module 117B also includes a row of vent openings 213B defined along a trailing side 215B of the row of cleaning material dispensing openings 209B. Each of the first upper surface module and the second upper surface module 117A/117B includes a respective air inlet defined between the row of cleaning material dispensing ports 209A/209B and the first row of vacuum ports 217A/217B. (plenum) area 225A/225B. In each of the first upper surface module and the second upper surface module 117A/117B, the row of vents 213A/213B is in fluid communication connection with the intake area 225A/225B. In each of the first upper surface module and the second upper surface module 117A/117B, each intake area 225A/225B is defined to facilitate air flow from the row of vents 213A/213B to the first row of The vacuum ports 217A/217B of the vacuum port 217A/217B without the interference caused by the air flow to the cleaning material to be dispensed on the substrate by the cleaning material dispensing ports 209A/209B in rows. Each row of vents 213A and 213B is defined to provide a substantially uniform flow of ventilation air into intake regions 225A and 225B, respectively, along the length of protruding frames 221A and 221B, respectively.

[0045] Confining the flushing meniscus to each of the flushing meniscus regions 223A and 223B is dependent on sufficient air ingress in the fluid flow through each of the first row of vacuum ports 217A and 217B, respectively. In each of the first upper surface module and the second upper surface module 117A/117B, rows of vents 213A/213B are defined to provide sufficient air flow in the intake area 225A/225B so that sufficient air is available The fluid flow enters through the first row of vacuum ports 217A/217B. The volume of the inlet region 225A/225B is defined to provide a sufficient volume of air to flow through the first row of vacuum ports 217A/217B while avoiding adverse effects on the layer of cleaning material present on the substrate within the inlet region 225A/225B. Air movement effects. For example, one such adverse air flow effect could be air pull on the layer of cleaning material, which would cause the layer of cleaning material to become thinner or wavier. Accordingly, the rows of vents 213A/213B and corresponding intake regions 225A/225B are defined and optimized to maintain the effectiveness of the cleaning process without adversely affecting the cleaning material coating aspect of the cleaning process. In one embodiment, the vertical cross-sectional area of ​​each intake region 225A and 225B cut along a direction extending vertically between the leading edge 141 and the trailing edge 143 of the upper processing head 117 is about 0.35 square inches.

[0046] In one embodiment, the first and second upper surface modules 117A/117B include a second row of vacuum ports 219A/219B defined along a trailing side of the first row of vacuum ports 217A/217B. A second row of vacuum ports 219A/219B is defined to provide multi-phase suction of cleaning and rinsing materials from the substrate while the substrate is positioned thereunder. The second row of vacuum ports 219A/219B can be controlled independently of the first row of vacuum ports 217A/217B. The ports of the second row of vacuum ports 219A/219B are defined as single phase liquid return ports and are configured to avoid destabilizing the irrigation fluid meniscus.

[0047] A second row of vacuum ports 219A/219B provides fine tuning of the cleaning process. The second row of vacuum ports 219A/219B provides additional control over the fluid velocity force distribution along the interface between the flushing material and the cleaning material. Once the cleaning material leaks through the first row of vacuum ports 217A/217B, the second row of vacuum ports 219A/219B can remove the leaked cleaning material, thereby providing a backup flushing capability, preventing the cleaning material from flushing with the flushing fluid. Additional mixing or dilution within the meniscus region 223A/223B. In addition, operation of the second row of vacuum ports 219A/219B allows for increased substrate carrier velocity, thereby increasing throughput and expanding the cleaning process window.

[0048] In one embodiment, the ports in the second row of vacuum ports 219A/219B are similar in size to the ports in the row of flushing material dispensing ports 211A/211B. In one embodiment, each port in the second row of vacuum ports 219A/219B is defined to have a diameter of about 0.03 inches, adjacent ports in the second row of vacuum ports 219A/219B are separated The center-to-center distance is about 0.125 inches. Furthermore, the ports in the second row of vacuum ports 219A/219B are angled downward against the direction of substrate movement in a similar manner to the ports in the row of flushing material dispense ports 211A/211B. Such an angle of the ports in the second row of vacuum ports 219A/219B provides sufficient spacing between the second row of vacuum ports 219A/219B and the row of flushing material dispensing ports 211A/211B to ensure The rinsing material can be evenly dispersed across the substrate in the rinsing meniscus region 223A/223B before encountering the suction of the second row of vacuum ports 219A/219B.

[0049] Figure 3A An isometric view of the lower machining head 118 according to one embodiment of the invention is shown. The lower machining head 118 includes two identical modules, a first lower surface module 118A and a second lower surface module 118B. The lower machining head 118 has a leading edge 301 and a trailing edge 303 . The bottom of the substrate to be cleaned passes sequentially over the first and second lower surface modules 118A and 118B along a direction extending from the leading edge 301 to the trailing edge 303 . The second subsurface module 118B is defined similarly to the first subsurface module 118A. In one embodiment, the first subsurface module and the second subsurface module 118A/118B are independently controllable. However, in another embodiment, the first lower surface module and the second lower surface module 118A/118B are jointly controllable.

[0050] Figure 3B An isometric view of a vertical cross-section of the lower machining head 118 cut longitudinally through the second lower surface module 118B is shown, in accordance with one embodiment of the present invention. Figure 3C A vertical cross-section of the lower machining head 118 is shown, cut perpendicularly between its leading edge 301 and trailing edge 303, in accordance with one embodiment of the present invention. Various features of the lower processing head 118 discussed herein can be referred to Figure 3A , 3B and 3C. Lower processing head 118 may be fabricated from essentially any type of material, such as plastic, metal, etc., that is compatible with semiconductor wafer cleaning processes and the chemicals used therein, and that can be formed into the configurations disclosed herein.

[0051] Each of the first and second lower surface modules 118A and 118B includes respective discharge channels 305A and 305B defined along the length of the lower processing head 118 for collecting and discharging material dispensed therein. like Figure 3B As shown, each discharge channel 305A/305B slopes downward from each outer end of the lower processing head 118 toward a location near the center of the discharge channel 305A/305B that defines a respective discharge port 315A/315B of the discharge channel 305A/305B. . Figure 3B Also shown is a high point defined within each discharge channel 305A/305B so that liquid, such as deionized water (DIW), flows downward toward the discharge channel 305A/305B to facilitate distribution within the discharge channel 305A/305B. The liquid supply port 317 that moves the material to the discharge ports 315A/315B and prevents the cleaning material impacting the discharge channels 305A and 305B from splashing.

[0052] Each of the first and second subsurface modules 118A and 118B includes protruding frames 307A and 307B respectively defined to define flushing meniscus regions 309A and 309B, respectively. Each protruding frame 307A/307B includes a leading portion and a trailing portion defining approximately a leading half and a trailing half of the irrigation meniscus region 309A/309B, respectively. The leading portion of each projection frame 307A and 307B is located on the trailing side of the discharge channels 305A and 305B, respectively. The trailing portion of each protruding frame 307A/307B is defined to provide a physical confinement of the meniscus for the bulk of the irrigation material present within the respective irrigation meniscus region 309A/309B. The rinse meniscus regions 309A/309B of the lower processing head 118 are defined to ensure that the bottom surface of the substrate remains wet during cleaning. This helps prevent premature drying of excess cleaning material that may reach the bottom surface of the substrate.

[0053]The first and second subsurface modules 118A/118B include respective rows of rinsing material dispensing ports defined within respective rinsing meniscus regions 309A/309B along the trailing portions of the respective protruding frames 307A/307B. 311A/311B. Each row of rinsing material dispensing ports 311A/311B is defined to dispense rinsing material upwardly onto a substrate when the substrate is positioned thereon. Each port in each row of flushing material dispensing ports 311A/ 311B is defined angled upward in a direction extending from trailing edge 303 to leading edge 301 . In one embodiment, the angle between the centerline of each port in each row of flushing material dispensing ports 311A/311B and the vertical vector is in the range of up to about 45 degrees. In another embodiment, the angle between the centerline of each port in each row of flushing material dispensing ports 311A/311B and the vertical vector is on the order of 20 degrees.

[0054] Each of the first and second subsurface modules 118A/118B includes a front edge that defines a lead that bisects the respective protruding frame 307A/307B. Each row of vacuum ports 313A/313B is defined to provide multi-phase suction of flushing material and air. The lower processing head 118 is defined as a mirror image of the upper processing head 117 in form factor, with the hydraulic force applied to the substrate acting as a fluid force or vacuum suction. More specifically, the flushing meniscus regions 309A/309B of the lower processing head 118 are substantially the same as the flushing meniscus regions 223A/223B of the upper processing head 117, with minor differences in the vacuum port configuration (313A/313B and 217A/ 217B) and depth.

[0055] Each row of vacuum ports 313A/313B of the lower processing head 118 may have a different port size and port spacing than the ports in the first row of vacuum ports 217A/217B of the upper processing head 117 . It should be appreciated that the rows of vacuum ports 313A/313B of the lower processing head 118 do not significantly affect the removal of contaminant particles from the upper surface of the substrate. In one embodiment, the depth of the rinse meniscus regions 309A/309B of the lower processing head 118 is greater than the depth of the rinse meniscus regions 223A/223B in the upper processing head 117, thereby reducing the amount of rinsing material from the respective rows. The rinse material dispensed by the dispense ports 311A/311B adds hydraulic pressure on the bottom of the substrate.

[0056] By operating the lower processing head 118 to balance the hydraulic force applied to the substrate by the upper processing head 117, the lower processing head 118 facilitates a stable cleaning process performance. Also, when a substrate carrier with a substrate thereon is not present between the upper and lower processing heads 117/118, the lower processing head 118 works together with the upper processing head 117 to rinse the meniscus region 223A/118. The 309A and 223B/309B provide a continuous, confined and stable meniscus of head-to-head flushing material. Also, when a substrate carrier with a substrate thereon is not present between the upper processing head and the lower processing head 117/118, the inclined discharge channels 305A/305B of the lower processing head 118 receive the lined discharge from the upper processing head 117. The cleaning material dispensed by the cleaning material dispensing port 209A/209B.

[0057] Figure 4 An upper processing head 117 positioned above the substrate 102 and a lower processing head 118 positioned below the substrate 102 facing the upper processing head 117 are shown in accordance with one embodiment of the present invention. The first upper surface module 117A of the upper processing head 117 operates to apply a cleaning material 401A on the substrate 102 and then expose the substrate 102 to the upper surface rinse meniscus 403A. The first upper surface module 117A operates to flow rinsing material across the upper surface rinsing meniscus 403A in a substantially unidirectional manner toward the cleaning material 401A and against the direction 400 of movement of the substrate 102 . The flow rate of the flushing material through the upper surface to flush the meniscus 403A is set to prevent leakage of cleaning material across the upper surface to flush the meniscus 403A. The first upper surface module 117A leaves a uniform film of rinse material 405 on the substrate 102 .

[0058] The second upper surface module 117B of the upper processing head 117 operates to apply the cleaning material 401B on the substrate 102 and then expose the substrate 102 to the upper surface rinse meniscus 403B. The second upper surface module 117B is operative to flow the rinsing material across the upper surface rinsing meniscus 403B in a substantially unidirectional manner toward the cleaning material 401B and against the direction 400 of movement of the substrate 102 . The flow rate of flushing material through the upper surface flushing meniscus 403B is set to prevent leakage of cleaning material across the upper surface flushing meniscus 403B. The second upper surface module 117B leaves a uniform film of rinse material 405 on the substrate 102 .

[0059] The first lower surface module 118A of the lower processing head 118 operates to apply the lower surface rinse meniscus 409A to the substrate 102 to balance the force exerted on the substrate 102 by the upper surface rinse meniscus 403A. The first subsurface module 117B is operative to flow the rinsing material across the subsurface rinsing meniscus 409A in a substantially unidirectional manner against the direction 400 of movement of the substrate 102 . The first lower surface module 117B leaves a uniform film of rinse material 411 on the substrate 102 .

[0060] The second lower surface module 118B of the lower processing head 118 operates to apply the lower surface rinse meniscus 409B to the substrate 102 to balance the force exerted on the substrate 102 by the upper surface rinse meniscus 403B. The second subsurface module 118B is operative to flow the rinsing material across the subsurface rinsing meniscus 409B in a substantially unidirectional manner against the direction 400 of movement of the substrate 102 . The second lower surface module 118B leaves a uniform film of rinse material 413 on the substrate 102 .

[0061] Based on the reverse arrangement of the upper and lower processing heads 117 and 118, it should be understood that the cleaning material dispensed from each row of cleaning material dispensing ports 209A/209B will be collected to the lower processing head when the substrate 102 is not present. 118 of the respective discharge channels 305A/305B. Accordingly, cleaning material may be produced before the substrate 102 enters between the upper and lower processing heads 117/118.

[0062] Furthermore, based on the opposite arrangement of the upper and lower processing heads 117 and 118, it should be understood that each row of vacuum ports 313A/313B of the lower processing head 118 complements each first row of vacuum ports 313B of the upper processing head 117 in terms of suction, respectively. Rows of vacuum ports 217A/217B to provide removal of rinse material dispensed by both the upper and lower processing heads 117/118 when the substrate 102 is not between the upper and lower processing heads 117/118. Also, the opposite configuration of the row of vacuum ports 313A/313B of the lower processing head 118 to the first row of vacuum ports 217A and 217B of the upper processing head 117, respectively, prevents the substrate 102 from being sucked into either the upper processing head or the lower limit processing head. 117/118 on.

[0063] Each of the first upper surface module and the second upper surface module 117A/117B of the upper machining head 117 can be operated independently. Also, each of the second row of vacuum ports 219A/219B of the first upper surface module and the second upper surface module 117A/117B can be operated independently. Also, each of the first and second subsurface modules 118A/118B of the lower machining head 118 can be operated independently. The above allows the following modes of operation:

[0064] • Mode 1: First upper surface module 117A on and second row of vacuum ports 219 closed, second upper surface module 117B off, first lower surface module 118A on, second lower surface module 118B off.

[0065] • Mode 2: First upper surface module 117A on and second row of vacuum ports 219 on, second upper surface module 117B off, first lower surface module 118A on, second lower surface module 118B off.

[0066] Mode 3: First upper surface module 117A is on and second row of vacuum ports 219 is closed, second upper surface module 117B is on, first lower surface module 118A is on, second lower surface module 118B is on.

[0067] • Mode 4: First upper surface module 117A open and second row of vacuum ports 219 open, second upper surface module 117B open, first lower surface module 118A open, second lower surface module 118B open.

[0068] The upper processing head 117 and lower processing head 118 of the cleaning system disclosed herein provide increased particle removal efficiency (PRE) at higher substrate throughput with low cleaning material consumption. The cleaning system provides optimized pressure distribution at the leading edge of each flushing meniscus, enabling unilateral vacuum suction at each flushing meniscus, thereby increasing localized suction without loss of flushing meniscus The liquid surface framework improves the particle removal efficiency. Also, by increasing the effective flushing and suction at the leading edge vacuum port without additional total flow or suction, leakage of cleaning material through the leading edge vacuum port flushing each of the menisci on the upper surface can be minimized reduce.

[0069] Although the present invention has been described in terms of several embodiments, it should be understood that various substitutions, additions, Transformations and equivalents. Accordingly, it is intended that the present invention include all such substitutions, additions, permutations and equivalents as fall within the true spirit and scope of the present invention.