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Semiconductor component, semiconductor wafer component, method for manufacturing semiconductor component, and method for manufacturing bonded structural body

A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., can solve the problems of change, short circuit, open circuit electrical characteristics, etc., and achieve the effect of reducing the gap

Inactive Publication Date: 2012-04-18
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On the other hand, the semiconductor element 401 adopts a structure in which the semiconductor element 406 and the internal electrode 407 are bonded by the bonding material 408, and if the bonding material 408 melts inside the semiconductor element 401, a short circuit, an open circuit, or a change in electrical characteristics may occur, Defects in the final product

Method used

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  • Semiconductor component, semiconductor wafer component, method for manufacturing semiconductor component, and method for manufacturing bonded structural body
  • Semiconductor component, semiconductor wafer component, method for manufacturing semiconductor component, and method for manufacturing bonded structural body
  • Semiconductor component, semiconductor wafer component, method for manufacturing semiconductor component, and method for manufacturing bonded structural body

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Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0064] figure 1 (a)~ figure 1 (e) is a schematic diagram which shows the semiconductor component of Embodiment 1 of this invention. figure 1 (a) and (e) are cross-sectional views of semiconductor components, figure 1 (b), (c) and (d) are along figure 1 A plan view of the bonding layer when the semiconductor device is viewed in the direction of the arrow in (a).

[0065] On a wafer (semiconductor wafer) made of Si with a diameter of 6 inches and a thickness of 0.3 mm, the semiconductor element 101 was cut out in a size of 4.5 mm×3.55 mm. The semiconductor element 101 is not limited to Si, but may be composed of Ge, or GaN, GaAs, InP, ZnS, ZnSe, SiC, SiGe, etc. which are compound semiconductors. In addition, depending on the function of the semiconductor element 101 , the size of the semiconductor element 101 may be a larger size of 6 mm×5 mm, or a smaller size such as 3 mm×2.5 mm, 2 mm×1.6 mm, or the like. The thickness of the semiconductor element 101 is not limited ...

Embodiment approach 2

[0092] In the above-mentioned semiconductor component in Embodiment 1, the convex portion 103 is formed on the surface of the bonding layer opposite to the surface in contact with the semiconductor element, and the size of the convex portion 103 is formed in a plane P (refer to figure 1 (a)) is a substantially hemispherical shape having a maximum height m of 10 μm in the normal direction and a maximum diameter n of 10 μm in the planar direction.

[0093] However, the height of the convex portion and the presence or absence of voids were verified in consideration of the fact that the passage of air would be easily closed if the height of the convex portion was too low.

[0094] image 3 It is a graph showing the relationship between the occurrence rate of voids and the height of the convex portion. In this experiment, the convex part was provided in one part of the central part of the bonding layer.

[0095] The occurrence rate (%) of voids can be expressed as:

[0096] Occ...

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PUM

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Abstract

Disclosed is a semiconductor component (100), wherein a semiconductor element (101) and a bonding layer (102), which is formed on one surface of the semiconductor element (101) and has Bi as a main component, are provided, and a protruding section (103) is formed on the bonding layer (102) surface which is on the reverse side of the surface in contact with the semiconductor element (101). Generation of voids can be suppressed by bonding together, using the semiconductor component (100), the bonding layer (102) and an electrode (201) disposed to face the bonding layer.

Description

technical field [0001] The present invention relates to a semiconductor element having a bonding layer composed of a bonding material mainly composed of Bi on the surface of the semiconductor element, a semiconductor wafer element, a method of manufacturing the semiconductor element, and a method of manufacturing a junction structure. Background technique [0002] Semiconductor components are mounted on substrates using solder material. For example, Sn-3wt%Ag-0.5wt%Cu with a melting point of 220° C. is generally used as a solder material for joining semiconductor components such as IGBT (Insulated Gate Bipolar Transistor) to a substrate. [0003] Figure 4 It is a schematic diagram of mounting semiconductor components on a substrate. When the semiconductor component 401 is mounted on the substrate 402, a solder immersion type immersion device is used, for example, the external electrodes of the semiconductor component 401 are covered with a solder material 403 (Sn-3% by wei...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/52
CPCH01L2924/01032H01L2224/27462H01L2224/29109H01L2224/29113H01L2924/0105H01L2924/10271H01L2224/32257H01L2924/10252H01L2924/0132H01L2224/48091H01L23/4827H01L2224/94H01L2924/1033H01L2924/0103H01L2924/157H01L2924/10272H01L2924/0133H01L24/48H01L2224/83385H01L24/32H01L2224/838H01L2224/2901H01L2224/48247H01L2924/10335H01L24/83H01L2924/01033H01L2224/83005H01L2924/01074H01L2924/01078H01L2924/01057H01L2924/13055H01L2924/01015H01L2924/01082H01L2924/01004H01L24/29H01L2224/32245H01L2924/10376H01L2924/01019H01L2924/01029H01L2224/29111H01L2224/27472H01L2924/10375H01L2224/29019H01L2924/014H01L2224/29082H01L2224/29101H01L2224/83191H01L24/27H01L2224/29187H01L2924/01047H01L2924/01005H01L2924/01006H01L2924/3512H01L2924/10329H01L2924/10253H01L2224/73265H01L2924/1305H01L2924/181H01L2924/00014H01L2924/01014H01L2924/01007H01L2924/01031H01L2924/01049H01L2924/01016H01L2924/01083H01L2924/01034H01L2924/00H01L2924/00012H01L2224/27H01L2224/45099H01L2224/45015H01L2924/207
Inventor 北浦秀敏古泽彰男酒谷茂昭中村太一松尾隆广
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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