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Multifunctional sensing flexible sensor and preparation method thereof

A flexible sensor and multi-functional technology, applied in the field of flexible sensors, can solve the problems of response and poor adaptability of traditional processes, and achieve the effects of reducing gaps, improving sensitivity, and high sensitivity

Pending Publication Date: 2019-08-16
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the flexible electronic skin of fully flexible and multi-functional robots is mostly focused on tactile perception, and the method is close to the perception ability, which cannot respond when the action object is approaching. Tensile sensors provide the possibility to solve the above problems. The sensing principle of the sensor is based on capacitive sensing and triboelectric power generation. It can detect both pressure and spatial positioning distance, and can also measure strain at the same time.
[0004] Flexible electronic technology is born out of hard electronic technology, so traditional semiconductor technology is also widely used, but some flexible materials are not well adaptable to traditional technology, so it is very necessary to improve the technology. The invention provides a multifunctional Sensing flexible sensor and preparation method thereof

Method used

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preparation example Construction

[0040] In order to improve the manufacturing success rate and quality of the sensor, a method for preparing a flexible sensor with a multi-functional sensing principle mainly includes a micro-column hole process, an electrode process, a sacrificial layer process and a reactive ion etching process. Among them, the micro-pillar hole process is used to prepare the intermediate dielectric layer, the electrode process is used to prepare the upper electrode layer and the lower electrode layer, the sacrificial layer process is used to release the sensor from the silicon wafer, and the reactive ion etching process is used for the upper electrode. layer, the middle dielectric layer and the bonded package of the bottom electrode layer. The micro-hole process adopts the method of photolithography and secondary inversion to prepare micron column holes with different diameters on polydimethylsiloxane. Photolithography ensures the stability and precision of the process; the mold of the secon...

Embodiment 1

[0077] (1) Clean the polished surface of the 4-inch silicon wafer with acetone, isopropanol and deionized water in sequence, and then dry it with nitrogen;

[0078] (2) 10% polyvinyl alcohol aqueous solution is spin-coated on the polished surface of the silicon crystal element, the spin-coating speed is 500 rpm, and the spin-coating time is 10 minutes, and then the silicon crystal element is placed on a hot plate to heat, The heating temperature is 80°C, the time is 20 minutes, and the polyvinyl alcohol is cured to form a film;

[0079] (3) Spin-coat polydimethylsiloxane on the silicon wafer coated with a sacrificial layer at a spin-coating speed of 800 rpm for 100 seconds, then place the silicon wafer on a hot plate for heating , the heating temperature is 80°C, the heating time is 30 minutes, and the polydimethylsiloxane is cured to form a film;

[0080] (4) Attach the mask plate to the surface of polydimethylsiloxane, then place the wafer coated with polydimethylsiloxane a...

Embodiment 2

[0102] (1) Clean the polished surface of the 4-inch silicon wafer with acetone, isopropanol and deionized water in sequence, and then dry it with nitrogen;

[0103] (2) 10% polyvinyl alcohol aqueous solution is spin-coated on the polished surface of the silicon wafer, the spin coating speed is 1000 rpm, and the spin coating time is 1 minute, and then the silicon wafer is placed on a hot plate to heat, The heating temperature is 100°C, the time is 5 minutes, and the polyvinyl alcohol is cured to form a film;

[0104] (3) Spin-coat polydimethylsiloxane on the silicon wafer coated with a sacrificial layer at a spin-coating speed of 1000 rpm for 50 seconds, then place the silicon wafer on a hot plate for heating , that is, the heating temperature is 100°C, the heating time is 10 minutes, and the polydimethylsiloxane is cured to form a film;

[0105] (4) Attach the mask plate to the surface of polydimethylsiloxane, then place the wafer coated with polydimethylsiloxane and sacrific...

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Abstract

The invention belongs to the field of flexible sensors, and discloses a multifunctional sensing flexible sensor and a preparation method thereof. The sensor comprises a top electrode layer, a middle dielectric layer and a bottom electrode layer, wherein the top electrode layer and the bottom electrode layer are the same in structure, and each of the top electrode layer and the bottom electrode layer comprises a flexible base material and liquid metal inlaid in the base material; the middle dielectric layer is arranged between the top electrode layer and the bottom electrode layer, and a plurality of micron-sized holes are arranged in the middle dielectric layer; when the sensor bears the pressure, the tensile or is close to a conductor, the pressure, the tension or a distance between the conductor and the sensor can be obtained by measuring the change of the capacitance of the sensor; when the friction between an object to be measured and the top electrode layer occurs, the pressure applied to the top electrode by the object to be measured is obtained by measuring the change of the voltage in the top electrode layer. The invention also discloses a preparation method of the sensor.According to the multifunctional sensing flexible sensor and the preparation method thereof, the high-sensitivity and multifunctional measurement of the flexible sensor are realized by combining two sensing principles of capacitive sensing and friction power generation.

Description

technical field [0001] The invention belongs to the field of flexible sensors, and more specifically relates to a flexible sensor for multifunctional sensing and a preparation method thereof. Background technique [0002] With the development of science and technology and society, the application of robots is gradually expanding from the fields of scientific research and industrial automation to medical care and home services. The premise of realizing the interaction between the robot and the external environment is that the robot can detect the information of the external environment and human beings through the sensor system carried by itself. The large-area, soft, micro-sensor array with tactile perception and data processing capabilities covered on the surface of the robot is called electronic skin. The acquisition of external environmental information by electronic skin is an important form of perception after robot vision, and it is one of the necessary media for mach...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/14G01B7/02G01B7/16
CPCG01L1/148G01B7/023G01B7/22
Inventor 吴豪张成李洋洋
Owner HUAZHONG UNIV OF SCI & TECH
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