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High-pressure sensor chip with SOI (silicon on insulator) rectangular film structure

A technology of high-voltage sensors and rectangular membranes, which is applied in instruments, measurement of fluid pressure, and measurement of the properties and forces of piezoelectric resistance materials. problems, to achieve the effect of ensuring sensitivity and accuracy, increasing the range and reducing hysteresis

Inactive Publication Date: 2013-10-16
XI AN JIAOTONG UNIV
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

The processing technology of sensors with these structures is very precise, which greatly affects the yield of sensor chips in processing.
At the same time, the range of sensors with these structures is also very limited.
Therefore, in view of the above existing design defects, this design proposes a new structure of rectangular membrane high-voltage sensor chip design to solve the limitations of the piezoresistive high-voltage sensor in the processing technology and the limitation of the range

Method used

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  • High-pressure sensor chip with SOI (silicon on insulator) rectangular film structure

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Embodiment Construction

[0019] The structural principle and working principle of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0020] refer to figure 1 and image 3 , a SOI rectangular film structure high-voltage sensor chip, including a high-voltage sensor chip 1, the central area of ​​the bottom surface of the high-voltage sensor chip 1 is corroded to form a rectangular film 7, on the front of the high-voltage sensor chip 1, along the [110] crystal direction, on the rectangular film The maximum stress on the 7 is arranged with a resistance strip R1, a resistance strip R2, a resistance strip R3 and a resistance strip R4, and a first pressure welding block 2 is arranged between the periphery of the rectangular film 7 and the edge of the high-voltage sensor chip 1, and the second pressure welding Block 3, the third pressure welding block 4, the fourth pressure welding block 5, the fifth pressure welding block 6, one end of the resistance bar ...

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Abstract

The invention discloses a high-pressure sensor chip with an SOI rectangular film structure, which comprises a high-pressure sensor chip, wherein the central area at the bottom of the high-pressure sensor chip is corroded to form a rectangular film; four resistor strips are distributed at the part with the maximum stress on the rectangular film in the right face of the high-pressure sensor chip along the [110] crystal direction; pressure welding blocks are distributed between the periphery of the rectangular film and the edge of the high-pressure sensor chip, and connected with the resistor strips to form a Wheatstone bridge; and the bottom of the high-pressure sensor chip is in integral bonding to PYREX 7740# glass by an anodic bonding technology. By the Wheatstone bridge, the variation of the resistance value can be precisely shown, thus the purpose of signal output can be achieved. The high-pressure sensor chip disclosed by the invention has characteristics of wide range, high temperature resistance, desirable dynamic property, high precision, miniaturization, safe and reliable operation, and high adaptability.

Description

technical field [0001] The invention relates to a high-voltage sensor chip, in particular to an SOI rectangular film structure high-voltage sensor chip. Background technique [0002] With the continuous development of the world's petrochemical industry, the requirements for sensors in high-pressure environments are constantly increasing. At the same time, the demand for sensor types is also increasing. Most of the sensors used in China come from abroad. These sensors are not only expensive, but also within the scope of protection in the technical field. Technology blockade against China's sensor industry is not uncommon in foreign markets. Therefore, the continuous development of new sensors to meet the needs of the current domestic market is the first priority of the current sensor development. [0003] Large-scale industrial production such as petrochemical industry has high requirements for the pressure range of the sensor. On the basis of ensuring the sensitivity, line...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L19/06G01L1/18
Inventor 赵玉龙牛喆田边王伟忠
Owner XI AN JIAOTONG UNIV
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