Single-phase half-bridge five-level inverter and application circuit thereof

Abstract

The invention provides a single-phase half-bridge five-level inverter, which comprises eight switching tubes and four clamping diodes, wherein each switching tube is in reverse connection with a diode; a first switching tube is connected with a direct-current positive leading-out end and a first junction; a second switching tube is connected with first and second junctions; a third switching tube is connected with second and third junctions; a fourth switching tube is connected with a fifth switching tube and the third junction; a fifth switching tube is connected with the fourth switching tube and a second leading-out end; a sixth switching tube is connected with third and fourth junctions; a seventh switching tube is connected with fourth and fifth junctions; an eighth switching tube is connected with the fifth junction and a direct-current negative leading-out end; and the clamping diodes are connected in series between the first leading-out end and the first junction, between the fourth junction and the first leading-out end, between the third leading-out end and the second junction as well as between the fifth junction and the third leading-out end. In the single-phase half-bridge five-level inverter and the application circuit thereof provided by the invention, the number of used semiconductors is reduced.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a single-phase half-bridge five-level inverter and an application circuit thereof. Background technique [0002] In medium-voltage and large-capacity applications, multi-level inverters are widely used. The current five-level inverters are mainly diode-clamped and flying capacitor structures. To be introduced below. [0003] see Figure 1a , which is a topology diagram of a diode-clamped five-level inverter provided in the prior art. [0004] Figure 1a Shown is the topology of a half-bridge five-level inverter. Diodes are used for voltage clamping for each switching tube. For example, the first diode DB1 is used to clamp the potential of the lower end of the switching tube T1 to the lower end of the first capacitor C1; the second diode DB2 is used to clamp the potential of the lower end of the switching tube T5 to the lower end of the first capacitor C1. The other ...

AI Technical Summary

Problems solved by technology

[0008] figure 2 The capacitors in the topology shown can play the role of voltage equalization, but the disadvantage is that the number of capacitors used is large

[0009] To sum up, the two five-level inverter topologies in the prior art both use more semiconductor devices, resulting in larger volume, more losses, and lower efficiency

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