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Over-temperature protection circuit for insulated gate bipolar transistor (IGBT)

An over-temperature protection circuit, circuit technology, applied in the direction of emergency protection circuit device, circuit device, automatic disconnection emergency protection device, etc.

Active Publication Date: 2014-04-09
NANJING APAITEK TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention well solves the deficiencies and problems in the above-mentioned prior art, and provides an IGBT over-temperature protection circuit. disappear

Method used

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  • Over-temperature protection circuit for insulated gate bipolar transistor (IGBT)
  • Over-temperature protection circuit for insulated gate bipolar transistor (IGBT)

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Embodiment Construction

[0014] Below in conjunction with accompanying drawing, technical content of the present invention is described:

[0015] Such as figure 1 As shown, the IGBT over-temperature protection circuit of the present invention includes a positive-phase hysteresis comparator circuit, an optocoupler-based isolation circuit, a three-state eight-bit converter and a resistor R12, wherein the positive-phase The output terminal of the hysteresis comparison circuit is connected to the input terminal of the isolation circuit based on the optocoupler, and the output terminal of the isolation circuit based on the optocoupler is connected to the enabling terminal OE of the three-state eight-bit converter, and the direction control terminal T / The R terminal is connected to one end of the resistor R12, the other end of the resistor R12 is connected to the 5V positive terminal of the digital power supply, the three-state eight-bit converter supplies power to the 5V power supply, the A group is conne...

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Abstract

The invention discloses an over-temperature protection circuit for an insulated gate bipolar transistor (IGBT). The circuit has reliable performance, is practical and low in cost, and can perform in-situ protection until an over-temperature phenomenon disappears when temperature exceeds set temperature. The over-temperature protection circuit for the IGBT comprises a non-inverted hysteresis comparison circuit, an optocoupler-based isolating circuit, a tri-state eight-bit converter and a resistor R12, wherein the output end of the non-inverted hysteresis comparison circuit is connected with the input end of the optocoupler-based isolating circuit; the output end of the optocoupler-based isolating circuit is connected with the enabling end OE of the tri-state eight-bit converter; the direction control end T / R of the tri-state eight-bit converter is connected with one end of the resistor R12; the other end of the resistor R12 is connected with the positive end of a 5V digital power supply; the tri-state eight-bit converter supplies power to the 5V power supply; and an A group is connected with the input of a pulse width modulation (PWM) signal, and a B group is connected with the output of the PWM signal.

Description

technical field [0001] The invention relates to a circuit, more specifically to an IGBT overtemperature protection circuit, belonging to the field of power electronics. Background technique [0002] The IGBT module is widely used in the field of power electronics and is a relatively expensive component. And overheating is one of the main causes of its damage. At present, most of the purchased IGBT driver boards are not designed with over-temperature protection; the common practice is to install a temperature sensor on the heat sink close to the IGBT module, collect the temperature signal into the processor, and calculate the surface temperature of the heat sink through the sampled value To estimate the temperature inside the IGBT; the temperature measured by this method is not very reliable, and the installation position of the temperature sensor on the radiator, thermal resistance and other factors have a great influence on the sampling value. At present, many IGBT manufa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02H7/20H02H5/04
Inventor 花跃学
Owner NANJING APAITEK TECH
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