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Non-volatile memory device and method for fabricating the same

A non-volatile storage and memory unit technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., and can solve problems such as changes in the resistance value of voltage divider resistors

Active Publication Date: 2012-07-11
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] However, when the voltage-dividing resistors are formed closer to the substrate together with underlying structures such as floating gates or control gates, the resistance values ​​of the voltage-dividing resistors change greatly

Method used

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  • Non-volatile memory device and method for fabricating the same
  • Non-volatile memory device and method for fabricating the same
  • Non-volatile memory device and method for fabricating the same

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Embodiment Construction

[0028] Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. However, this invention may be embodied in various forms and should not be construed as limited to the examples set forth herein. Rather, these embodiments are provided so that this description will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In this specification, the same reference numerals denote the same parts in the various drawings and embodiments of the present invention.

[0029] The drawings are not to scale and in some cases have been exaggerated in proportion to clearly depict features of the embodiments. When referring to a first layer being "on" a second layer or "on" a substrate, it means not only that the first layer is formed directly on the second layer or substrate, but also that there layer or where there is a third layer between the first layer and the substrat...

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Abstract

A method for fabricating a non-volatile memory device includes: providing a substrate which includes a cell region where a plurality of memory cells are to be formed and a peripheral circuit region where a plurality of peripheral circuit devices are to be formed; forming the memory cells that are stacked perpendicularly to the substrate of the cell region; and forming a first conductive layer for forming a gate electrode of a selection transistor over the memory cells while forming the first conductive layer in the peripheral circuit region simultaneously, wherein the first conductive layer of the peripheral circuit region functions as a resistor body of at least one peripheral circuit device of the peripheral circuit devices.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2010-0138806 filed on December 30, 2010, the entire contents of which are incorporated herein by reference. technical field [0003] Exemplary embodiments of the present invention generally relate to a memory device and a method of manufacturing the same, and more particularly, to a nonvolatile memory device in which memory cells are stacked on a substrate and a method of manufacturing the same. Background technique [0004] Non-volatile memory devices such as flash memory retain stored data even when power is turned off. [0005] A nonvolatile memory device includes a cell region having memory cells, and various circuits having unit elements required to perform an access operation on the memory cells. [0006] The memory cells in the cell area have a stacked structure of a tunnel insulating layer, a floating gate, a charge blocking layer and a con...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8247H01L27/115H10B69/00
CPCH01L29/7926H01L27/11582H10B43/27H01L21/31051H01L21/76224H10B43/35H10B41/40H10B41/41H01L29/66666H01L29/66825H01L29/66833
Inventor 安正烈
Owner SK HYNIX INC