Solar cell capable of saving silver paste and preparation process thereof
A solar cell and silver paste technology, which is applied in the field of solar cells, can solve the problems of complex preparation process and high cost, and achieve the effects of good conductivity, high production efficiency, and reduced series resistance
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Embodiment 1
[0042] Such as Figure 1 to Figure 7 As shown, a solar cell capable of saving silver paste according to the present invention includes a silicon wafer 1, an all-aluminum paste layer 2 is printed on the back of the silicon wafer 1, and an all-aluminum paste layer on the back of the silicon wafer 1 The surface of 2 is provided with a back-side silver-plated copper tape 3, the front side of the silicon wafer 1 is provided with a pattern of sub-grid lines 4, and the surface of the sub-grid lines 4 is provided with a number of bottom surfaces brushed with silver paste 5 on the front side. Copper strips 6, the front silver-plated copper strips 6 are arranged at intervals and extend outward from the side of the silicon wafer 1 and extend to the back of the adjacent silicon wafer. The front silver-plated copper strip 6 includes a front surface arranged at intervals on the front surface of the silicon wafer The main grid line 61 of the electrode and the solder ribbon 62 extending outwar...
Embodiment 2
[0053] This embodiment is basically the same as the first embodiment above, and the difference is that the specific steps of the solar cell manufacturing process are different: specifically, the thickness of the aluminum paste layer 2 in the above step (1) is 15-20 μm;
[0054] In the above step (2), the width of the back silver-plated copper strip 3 is 2 mm, the silver-plated thickness on the back silver-plated copper strip 3 is 1 μm, and its surface roughness is R6.4;
[0055] In the above step (3), the width of the secondary gate line 4 is 90 μm and the height is 15-20 μm;
[0056] In the above step (4), the thickness of the silver paste 5 is 15-20 μm, and the front side silver-plated copper strip 6 directly above the front surface of the silicon wafer 1 has a width of 600 μm and a height of 300 μm; The width of the epitaxial part is 1.2mm, the height is 200μm, the thickness of silver plating on the front silver-plated copper strip 6 is 1μm, and its surface roughness is R6.4.
[00...
Embodiment 3
[0059] This embodiment is basically the same as the previous two embodiments, and the difference lies in the preparation process:
[0060] In the above step (1), the thickness of the aluminum paste layer 2 is 20-25 μm;
[0061] In the above step (2), the width of the back silver-plated copper tape 3 is 2.5 mm, the thickness of the silver plating on it is 2 μm, and the surface roughness is R12.5;
[0062] In the above step (3), the width of the auxiliary gate line 4 is 100 μm and the height is 25-30 μm;
[0063] In the above step (4), the silver-plated copper tape 6 on the front side with the silver paste 5 brushed on the bottom surface is pressed on the front side of the silicon wafer 1 with the pattern of the sub-grid lines 4, and dried in a drying oven. The thickness of the silver paste 5 is 25-30μm, the width of the busbar 61 in the front silver-plated copper tape 6 directly above the front surface of the silicon wafer 1 is 900 μm and the height is 250 μm, and the width of the oute...
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