Modeling method of dynamic simulation model of reverse recovery characteristics of thyristor

Abstract

The invention relates to a modeling method of a dynamic simulation model of reverse recovery characteristics of a thyristor. The modeling method comprises the following steps: connecting a controllable current source branch at the side of a common thyristor simulation model in parallel; implementing various control strategies by a control module; directly generating a dynamic value of the reverse recovery current by adopting a mathematical expression; determining mathematical expression parameters according to a turn-off characteristic curve; adopting a signal processing method, such as amplitude limiting and the like; and appropriately advancing a zero-crossing detection. The model is good in accuracy and usability. By the adoption of the modeling method, the parameter design problem of an excess voltage protection circuit of a thyristor rectifier circuit is effectively solved, so that the modeling method has important reference significance for engineering design and application.

Description

technical field [0001] The invention relates to a modeling method for a dynamic simulation model of a thyristor reverse recovery characteristic, which can be directly used in a thyristor converter circuit for dynamic simulation to study the reverse recovery overvoltage problem, and belongs to the technical field of power electronics applications. Background technique [0002] In recent years, with the rapid development of power electronic semiconductor component technology, large-capacity and high-performance thyristor components have been widely used, and the reverse recovery overvoltage problem of thyristors has received more and more attention. As we all know, there are many factors that affect the reverse recovery overvoltage of thyristors. It is still difficult to accurately calculate the magnitude of this overvoltage, and the parameter selection of overvoltage protection circuit still lacks sufficient calculation basis. If the parameters of the protection circuit are i...

AI Technical Summary

Problems solved by technology

[0009] Although some people have proposed a simulation solution method using the reverse recovery equivalent circuit of the thyristor, this simulation is only limited to the partial simulation of the second half of the reverse recovery, not the simulation of the entire reverse recovery process of the thyristor. It cannot dynamically reflect the entire process of the reverse recovery characteristics of the thyristor

In addition, some people have also introduced some thyristor macro models combining micro and macro, using the charge and discharge characteristics of capacitors to simulate the reverse recovery process. The control method of capacitors is relatively complicated, and it is difficult to achieve accurate simulation of reverse recovery characteristics, which is not convenient for engineering. direct application

Images