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Semiconductor structure

A semiconductor and transparent conductive layer technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., and can solve problems such as light leakage

Inactive Publication Date: 2012-07-25
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Therefore, the purpose of the present invention is to provide a semiconductor structure to solve the problem of light leakage caused by the common electrode reflecting light to the channel layer.

Method used

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  • Semiconductor structure
  • Semiconductor structure
  • Semiconductor structure

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Embodiment Construction

[0029] The following will clearly illustrate the spirit of the present invention with drawings and detailed descriptions. Anyone with ordinary knowledge in the technical field can change and modify the technology taught by the present invention after understanding the preferred embodiments of the present invention. without departing from the spirit and scope of the present invention.

[0030] Also refer to Figure 1 to Figure 3 , figure 1 A partial top view of an embodiment of the semiconductor structure of the present invention is shown. figure 2 for along figure 1 The profile of the line segment A-A', image 3 for along figure 1 The profile of the line segment B-B'.

[0031] The semiconductor structure 100 includes a substrate 110, a first metal layer 120, a dielectric layer 130, a channel layer 140, a second metal layer 150, a protective layer 160, a third metal layer 170, an insulating layer 180, and a first transparent conductive layer 190, and the second transpare...

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Abstract

The invention refers to a semiconductor structure; horizontal spacing exists between a common electrode and a grid electrode, which can avoid reflecting external light to a path layer on the grid electrode by the common electrode. According to the invention, a transparent conductive layer in direct contact with the common electrode is used for maintaining capacitance, and the transparent conductive layer can not reflect external light, thus the case of light leakage can be avoided.

Description

technical field [0001] The present invention relates to a semiconductor structure, and in particular to a semiconductor structure of a thin film transistor. Background technique [0002] A liquid crystal display (LCD) mainly includes a thin film transistor substrate, a color filter and a plurality of liquid crystal units. The TFT array substrate is composed of a plurality of pixel structures, and each pixel structure corresponds to a liquid crystal unit. The thin film transistor substrate has scan lines, pixel electrodes and switches. Wherein, the switch has a gate, a source, and a drain, respectively electrically connected to the scan line, the data line (data line) and the pixel electrode. [0003] Generally speaking, the aperture ratio of a pixel directly affects the utilization of the backlight source and the brightness of the liquid crystal display. In the design of the capacitor structure, the common electrode line is used as the lower electrode of the capacitor str...

Claims

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Application Information

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IPC IPC(8): H01L27/32H01L21/77
Inventor 叶佳琪詹博旭戴嘉骏
Owner AU OPTRONICS CORP
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