Quaternary gallium tellurium antimony (m-gatesb) based phase change memory devices

A storage device, phase change technology, applied in electrical components and other directions, can solve problems such as difficulty in finding available materials

Inactive Publication Date: 2012-07-25
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Of course, picking the right ones for these properties requires design trade-offs that make finding usable materials difficult

Method used

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  • Quaternary gallium tellurium antimony (m-gatesb) based phase change memory devices
  • Quaternary gallium tellurium antimony (m-gatesb) based phase change memory devices
  • Quaternary gallium tellurium antimony (m-gatesb) based phase change memory devices

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Embodiment Construction

[0081] The description of the following embodiments of the present invention is collocation Figure 1 to Figure 17 Be explained.

[0082] figure 1 A "mushroom-shaped" memory cell is shown having a first electrode 111 extending through a dielectric layer 112, a memory element 113 comprising a phase change host based on a four-element phase change material M-GaTeSb, and a second electrode 114 on the storage element 113 . The first electrode 111 is coupled to an access device (not shown), such as a diode or a transistor, while the second electrode 114 is coupled to or may be part of a bit line (not shown). The first electrode 111 has a relatively narrower width than the second electrode 114 and the memory element 113, resulting in a smaller contact area between the first electrode 111 and the phase change body of the memory element, and a larger contact area on the second electrode 111. Between the electrode 114 and the phase change body of the storage element, a larger curren...

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Abstract

The invention discloses a quaternary gallium tellurium antimony (m-gatesb) based phase change memory devices. A phase change material comprising a quaternary GaTeSb material consisting essentially of MA(GaxTeySbz)B, and where M comprises a group IVA element C, Si, Ge, Sn, Pb, a group VA element N, P, As, Sb, Bi, or a group VIA element O, S, Se, Te, Po, having a value A such that the transition temperature is increased relative to the transition temperature in GaxTeySbz, without M, and the difference between the melting temperature and the transition temperature is reduced relative to the difference in GaxTeySbz, without M.

Description

technical field [0001] The present invention relates to phase change memory devices, and materials for such devices. Background technique [0002] Phase change-based materials, such as chalcogenide-based materials or similar materials, can be used in integrated circuits to induce a phase change between an amorphous phase and a crystalline phase by providing an appropriate amount of current. Amorphous phases are often characterized by higher electrical resistance than crystalline phases, which can be easily sensed to indicate data. This property has attracted widespread attention, especially for the use of programmable resistive materials to form non-volatile memory circuits that can be read and written using random access. [0003] According to the phase change material Ge well known as GST 2 Sb 2 Te 5 It has been extensively studied for use in integrated circuits. Other additives or other chalcogenides may also be used. Chalcogenides are groups arbitrarily selected fr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH01L45/06H01L45/148H01L45/1226H01L45/00H01L45/1625H01L45/1233H10N70/823H10N70/231H10N70/884H10N70/026H10N70/826
Inventor 庄东桦陈逸舟金重勳高金福张博钦朱勇青
Owner MACRONIX INT CO LTD
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