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Data writing method and system and controller for non-volatile memory

A data writing, non-volatile technology, applied in the field of non-volatile memory modules, memory controllers and memory storage devices, can solve the problem that rewritable non-volatile memory storage devices cannot write data, entity The sector cannot store data normally, bad and other problems

Active Publication Date: 2016-12-14
PHISON ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And, when the normal physical blocks in the rewritable nonvolatile memory module are not enough to perform the writing in the above-mentioned alternate manner, the rewritable nonvolatile memory storage device will not be able to be used for writing input data
[0006] Due to the limitations of the manufacturing process, some physical sectors in the physical blocks of the rewritable non-volatile memory module cannot store data normally due to production defects, so they are identified as bad physical blocks and are no longer used
In particular, when the number of bad physical blocks causes the rewritable non-volatile memory storage device to fail to operate, the rewritable non-volatile memory module will be judged as defective and cannot be used

Method used

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  • Data writing method and system and controller for non-volatile memory
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  • Data writing method and system and controller for non-volatile memory

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Embodiment Construction

[0087]In the management of the rewritable non-volatile memory module, the physical writing unit of the rewritable non-volatile memory module will be classified as belonging to the data area or the spare area, wherein the physical writing unit of the data area It is used to store data, and the physical writing unit of the spare area is used to write data and replace it with the data area. In addition, each physical writing unit includes a data bit area and a redundant bit area, wherein the data bit area includes a plurality of physical writing segments. In the data writing method of the present invention, at least one unused physical writing section (abbreviated as unused section) among the physical writing sections of each physical writing unit will be identified, and when writing When segment data is written into each physical writing unit, unused segments of each physical writing unit are not used to write the segment data. Based on this, the capacity of each logical write ...

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Abstract

The present invention provides a method and system for writing data into a rewritable non-volatile memory module and a memory controller, wherein the rewritable non-volatile memory module has a plurality of physical writing units, and each A physical write unit has multiple physically written sector pages. The data writing method includes identifying at least one unused section among the physical writing sections of each physical writing unit; and writing a plurality of section data into these physical writing units, wherein each The unused sectors in the physical write unit will not be used to write the data of these sectors. Based on this, the method can effectively utilize the normal physical write section in the physical write unit.

Description

technical field [0001] The invention relates to a data writing method, in particular to a data writing method capable of reusing a non-volatile memory module with a large number of bad physical blocks, and a memory controller and a memory storage device using the method. Background technique [0002] Since rewritable non-volatile memory (rewritable non-volatile memory) has the characteristics of data non-volatility, power saving, small size, no mechanical structure, and fast read and write speed, it is most suitable as a storage medium for electronic products. A solid state drive (SSD) is a storage device using a NAND flash memory module as a storage medium. Due to its small size and large capacity, fast memory has been widely used for storing important personal data. Therefore, the fast memory industry has become a very popular part of the electronics industry in recent years. [0003] Generally speaking, in the rewritable non-volatile memory storage device, the physical ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/06G11C16/02
Inventor 许年澔颜才富欧阳志雄
Owner PHISON ELECTRONICS