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Solid-state imaging element, method for producing solid-state imaging element, and electronic device

A solid-state imaging element and element isolation technology, which is applied in the direction of electric solid-state devices, radiation control devices, electrical components, etc., can solve the problem of reducing image quality and achieve the effect of improving image quality, optical sensitivity and pixel density

Inactive Publication Date: 2012-08-01
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The aforementioned incident light sometimes causes defects such as the generation of noise, thereby degrading the quality of the captured image

Method used

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  • Solid-state imaging element, method for producing solid-state imaging element, and electronic device
  • Solid-state imaging element, method for producing solid-state imaging element, and electronic device
  • Solid-state imaging element, method for producing solid-state imaging element, and electronic device

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0025] Embodiments of the present invention are described in the following order with reference to the drawings.

[0026] 1. An example of the schematic structure of the solid-state imaging element of the embodiment;

[0027] 2. The structure of the solid-state imaging element of the first embodiment;

[0028] 3. The first example of the manufacturing method of the solid-state imaging element of the first embodiment;

[0029] 4. A second example of the method of manufacturing the solid-state imaging element of the first embodiment;

[0030] 5. The structure of the solid-state imaging element of the second embodiment (an example in which the pinning hole overlaps the transfer gate);

[0031] 6. The structure of the solid-state imaging element of the third embodiment (an example in which the pinning hole is arranged at the center of the pixel); and

[0032] 7. Embodiments of electronic devices

[0033] It should be noted that the same reference numerals are used for the same...

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PUM

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Abstract

A solid-state imaging element includes a wiring layer; a charge accumulation unit including a semiconductor layer provided on the wiring layer; and a photoelectric conversion film provided on the semiconductor layer, wherein a pinning layer of a conductivity type opposite to a conductivity type of the charge accumulation unit, the pinning layer including an opening, is provided in a region of the charge accumulation unit, the region being located at an interface between the charge accumulation unit and the photoelectric conversion film.

Description

[0001] Cross References to Related Applications [0002] The present application contains subject matter related to the disclosure of Japanese Priority Patent Application JP 2011-014110 filed in the Japan Patent Office on Jan. 26, 2011, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a solid-state imaging element having a multilayer structure including a photoelectric conversion unit and a wiring layer, a method of manufacturing the solid-state imaging element, and an electronic device including the solid-state imaging element. Background technique [0004] In a solid-state imaging element in which a plurality of photoelectric conversion units are arranged, known structures for successfully improving optical sensitivity and obtaining higher pixel density include, for example, a backside-illuminated type structure. In a backside illuminated solid-state imaging element, a photoelectric conversion unit i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N25/00
CPCH01L27/1463H01L27/14641H01L27/14627H01L27/14621H01L27/14638H01L27/1464H01L27/146H04N25/00
Inventor 太田一生
Owner SONY CORP