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Film-forming apparatus and film-forming method

A film-forming device and film-forming technology, which are applied in the directions of ion implantation plating, coating, electrical components, etc., can solve the problems of increasing device cost and increasing device cost.

Inactive Publication Date: 2012-08-08
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a result, the device cost increases according to the number of mechanisms, and the device expands according to the volume of the mechanism, which increases the device cost

Method used

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  • Film-forming apparatus and film-forming method

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Embodiment Construction

[0030] Hereinafter, embodiments of the present invention are described with reference to the drawings. First, refer to figure 1 , the overall configuration and functions of a sputtering apparatus 1 capable of performing a sputtering method (film formation method) according to the present invention are described. All control systems of sputtering apparatus 1 serving as a film forming apparatus are connected to a computer (not shown) serving as a control section so that the computer can control the control systems collectively. A program for executing the sputtering method is installed to the control section.

[0031] The sputtering apparatus (film formation apparatus) 1 of this embodiment forms a thin film on a substrate (film formation object) 31 by sputtering, and, as figure 1 As shown, a vacuum chamber 2 and a substrate holder (holder portion) 32 for holding a substrate 31 in the vacuum chamber are included. Also, the sputtering apparatus 1 includes a plurality of (two in...

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Abstract

Provided are a film-forming apparatus and a film-forming method capable of preventing complication of an apparatus mechanism in formation of a thin film of multiple materials by sputtering to simplify the apparatus mechanism and preventing an increase in an apparatus cost. The film-forming apparatus includes a vacuum chamber, a substrate holder for holding a substrate, cathode mechanisms for supporting targets respectively so that the targets can be opposed to the substrate in the vacuum chamber, and shutters movable forward and backward individually between the targets made of different materials and the substrate to block or pass film-forming particles generated from the targets. At least one of the shutters is formed of a target material different from those for the targets so that the at least one of the shutters is configured as a shutter that also functions as a target.

Description

technical field [0001] The present invention relates to a film forming apparatus and a film forming method for forming a thin film by sputtering. Background technique [0002] In general, thin film formation technology is indispensable in the manufacture of semiconductor devices, display devices, lighting devices, imaging devices, and other electronic and optical components. As a method of forming a thin film, a sputtering method is known. The thin film formation technique using sputtering has advantages that a thin film can be formed at a low temperature, a thin film having a large area can be formed, and electrical control of film formation parameters can be easily performed. [0003] The sputtering method is carried out by means of a sputtering device. According to this sputtering method, accelerated ions are irradiated onto a target so that target particles are ejected from the target, and the target particles are deposited in a thin film shape on a silicon wafer or a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34
CPCH01J37/3429C23C14/3407H01J37/3447C23C14/3428H01J37/3417C23C14/352C23C14/3464
Inventor 松本诚谦桑原世治
Owner CANON KK
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