A diode with improved recovery softness characteristics and its manufacturing method
A manufacturing method and diode technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as high peak voltage, and achieve the effects of avoiding peak voltage, improving reverse recovery softness, and prolonging recombination time.
Active Publication Date: 2016-01-20
HANGZHOU SILAN INTEGRATED CIRCUIT
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Problems solved by technology
[0005] The purpose of the present invention is to provide a kind of diode that improves recovery softness characteristic and its manufacturing method, through the improvement of epitaxy process in semiconductor manufacturing process, to improve diode reverse recovery softness factor, solve fast recovery diode reverse recovery The problem of high peak voltage generated during the process, so as to obtain better reverse recovery characteristics under the premise of ensuring the reverse recovery time of the diode
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[0029] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements well known to those skilled in the art are also covered by the protection scope of the present invention.
[0030] Secondly, the present invention uses schematic diagrams to describe in detail. When detailed examples of the present invention, for ease of explanation, the schematic diagrams are not partially enlarged according to the general scale, and should not be used as a limitation to the present invention.
[0031] figure 2 It is a schematic diagram of the structure of a diode for improving recovery softness characteristics in an embodiment of the present invention, such as figure 2 As shown, the present invention provides a diode with improved recovery softness charac...
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The present invention provides a diode with improved recovery softness characteristics and a manufacturing method thereof. The diode comprises a combination of a first intrinsic epitaxial layer, a high doping concentration epitaxial layer, a second intrinsic epitaxial layer and a low doping concentration epitaxial layer. Layer recombination process structure, so that when the diode is working in the reverse recovery process, after the minority carrier storage time of the PN junction, compared with the low-concentration doped epitaxial layer, the high-concentration doped epitaxial layer can provide more for recombination. Carriers increase the recombination time accordingly, and the current and voltage changes more smoothly, thereby obtaining a larger ratio of recombination time to storage time, thereby improving the softness factor of the diode. Furthermore, the softness factor of diodes improved from 0.5 to 1.2 can be increased from 0.5 to 1.2 under the premise of ensuring that the reverse recovery time does not change, so that it is more suitable for fast rectification circuits.
Description
Technical field [0001] The present invention relates to the field of semiconductor wafer manufacturing, in particular to a manufacturing method for improving the softness characteristics of fast recovery diodes. Background technique [0002] Fast recovery diode is a kind of diode with good switching characteristics and short reverse recovery time. The reverse recovery time is usually expressed by trr. It is mainly used as a rectifier tube in electronic circuits such as switching circuits and frequency converters. With the large-scale application of new power devices such as IGBT and VDMOS, fast recovery diodes used as supporting devices in circuits have attracted more and more attention. In use, the reverse recovery time of the initial concern gradually transitions to the characteristics of reverse recovery softness, because the strength of the softness will affect the peak voltage generated during the reverse recovery process. If the peak voltage generated is too high High, it ...
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IPC IPC(8): H01L29/06H01L29/861H01L21/329
Inventor 王明辉贾文庆王平
Owner HANGZHOU SILAN INTEGRATED CIRCUIT