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Substrate processing apparatus, wafer holder, and method of manufacturing semiconductor device

A technology for substrate processing devices and wafer holders, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc.

Active Publication Date: 2012-09-05
KOKUSA ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is conceivable to use a material with excellent heat resistance such as SiC to form a boat in which multiple parts are fixed as in the past, but materials such as SiC have good heat resistance, and accordingly it is difficult to fix them by welding or the like.

Method used

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  • Substrate processing apparatus, wafer holder, and method of manufacturing semiconductor device
  • Substrate processing apparatus, wafer holder, and method of manufacturing semiconductor device
  • Substrate processing apparatus, wafer holder, and method of manufacturing semiconductor device

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no. 1 approach

[0035] [First Embodiment] Hereinafter, a first embodiment of the present invention will be described in detail with reference to the drawings. In the following embodiments, a so-called batch type vertical SiC epitaxial growth apparatus that stacks SiC wafers in the height direction (vertical direction) is exemplified as a SiC epitaxial growth apparatus that is an example of a substrate processing apparatus. Thereby, the number of SiC wafers that can be processed at one time is increased and the throughput (manufacturing efficiency) is improved.

[0036] figure 1 It is a perspective view showing the outline of the substrate processing apparatus of the present invention. First, use figure 1 A substrate processing apparatus for forming an SiC epitaxial thin film and a method for manufacturing a substrate for forming an SiC epitaxial thin film, which is one of the manufacturing steps of a semiconductor device in one embodiment of the present invention, will be described.

[003...

no. 2 approach

[0122] [Second Embodiment] Hereinafter, a second embodiment of the present invention will be described in detail with reference to the drawings. In addition, about the same part as the said 1st Embodiment, the same code|symbol is attached|subjected, and the detailed description is abbreviate|omitted.

[0123] Figure 12 represent the wafer holder of the second embodiment and Figure 7 The corresponding stereogram, Figure 13 is for illustration Figure 12 An explanatory diagram of the reactive gas consumption portion of the wafer holder.

[0124] In the second embodiment, only the shape of the holder base 210 forming the wafer holder 200 is different from the first embodiment described above. That is, in the first embodiment, a pair of cutouts 112d are provided on the stand base 110 (refer to Figure 7 ), the outer peripheral side is non-circular, and in the second embodiment, each notch 112d is not provided on the stand base 210, but the outer peripheral side is circular...

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Abstract

Provided is a substrate processing apparatus having a stack structure of wafers that can endure a high temperature without bad influence on film-forming precision. The stack structure includes a holder base (110) configured to hold a wafer (14) at an inner circumference side thereof, and boat columns (31a to 31c) each including a holder retainer (HS) configured to hold an outer circumference side of the holder base (110), wherein an outer diameter of the holder base (110) is larger than that of the wafer (14), and the holder base (110) is detachable from the holder retainers (HS).

Description

technical field [0001] The present invention relates to a substrate processing device for processing a plurality of stacked substrates, a wafer holder, and a method for manufacturing a substrate or a semiconductor device, and more particularly to a substrate for forming a silicon carbide (SiC) epitaxial thin film on a substrate. A bottom processing device, a wafer holder, and a method for manufacturing a substrate or a semiconductor device. Background technique [0002] Silicon carbide (SiC) is attracting attention especially as an element material for power devices because of its higher dielectric strength and thermal conductivity than silicon (Si). On the one hand, SiC is known to be more difficult to manufacture a crystal substrate and a semiconductor device (semiconductor device) than Si because of its small impurity diffusion coefficient and the like. For example, the epitaxial film formation temperature of Si is about 900°C to 1200°C, and the epitaxial film formation ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/673H01L21/205
CPCH01L21/67309H01L21/67757
Inventor 福田正直佐佐木隆史山口天和原大介
Owner KOKUSA ELECTRIC CO LTD
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