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Nonvolatile semiconductor memory and data writing method

A non-volatile, semiconductor technology, applied in static memory, read-only memory, information storage, etc., can solve the problems of increasing write times and increasing time spent on data writing, so as to reduce the number of write times, The effect of shortening the time

Active Publication Date: 2012-09-19
LAPIS SEMICON CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] However, according to the above-mentioned gate grading process, although it is possible to accurately store a desired amount of charge, the amount of charge that can be injected in each write process is very small, so there are write times. The problem that it takes more time to write data when there are more

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  • Nonvolatile semiconductor memory and data writing method

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Embodiment Construction

[0032] In the semiconductor nonvolatile memory of the present invention, when charge is injected into the charge storage portion formed in the memory cell by applying a write voltage corresponding to write data to the drain region or the source region of the memory cell, according to The amount of charge stored in the charge storage portion increases to lower the write voltage. That is, by applying the first voltage to the drain or source region of the memory cell as the write voltage corresponding to the value of the write data, the charge is injected into the charge storage part until it exceeds the voltage corresponding to the value corresponding to the write data. Up to the second charge amount lower than the first charge amount, if the second charge amount exceeds the second charge amount, a second voltage lower than the first voltage is applied to the drain or source region of the memory cell as a write voltage to charge the charge storage part. Charge is injected so tha...

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Abstract

The invention aims to provide a nonvolatile semiconductor memory and a data writing method, which quickly and precisely accumulate a desired amount of charges corresponding to data-to-be-written in a charge accumulating part of a memory cell. When charges are injected into the charge accumulating part of the memory cell by applying a writing voltage corresponding to the data-to-be-written to the drain or source region of the memory cell, the writing voltage is reduced on the basis of an increase in the amount of charges accumulated in the charge accumulating part.

Description

technical field [0001] The invention relates to a semiconductor nonvolatile memory and a data writing method in the semiconductor nonvolatile memory. Background technique [0002] At present, as a semiconductor nonvolatile memory, it is known to design charge storage parts in the drain region and source region of each memory cell composed of a single MOS (Metal Oxide Semiconductor) transistor. Charge can store two types of binary (0, 1) bit data, that is, 2-bit data (for example, refer to Non-Patent Document 1 and Patent Document 1). [0003] In this semiconductor nonvolatile memory, a state in which charges (electrons) are not stored in the charge storage unit is an initial state, and the state in which charges are not stored corresponds to data "1", and the state in which charges are stored corresponds to data "0". [0004] Data writing / reading / erasing of the semiconductor nonvolatile memory is performed as follows. [0005] First, data "0" is written in the charge stora...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/06G11C16/10
CPCG11C16/0475G11C16/10
Inventor 松井克晃小川绚也
Owner LAPIS SEMICON CO LTD