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Silicon-tin selenide nano multilayer composite phase change thin film material for phase change memory

A compound phase change and nano-multilayer technology, which is applied in the field of materials in the field of microelectronics technology, can solve the problems of low crystal resistance and poor data retention ability, and achieve improved crystal resistance, improved crystal resistance, and good data The effect of maintaining ability

Inactive Publication Date: 2012-09-19
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented technology relates to improved compositions made from silicon or selenium telluride (SiTe) layers on top of another layer called tin selenite (TSI). These new films have excellent properties such as higher melting point compared to existing phases like phosphor bronze, making them suitable for use in electronic devices. They also maintain their performance even when they are exposed to harsh environments over time without losing any significant amount of storage capacity due to changes caused by temperature fluctuations. Overall these technical improvements make this type of composition ideal for applications related to phasechange memories.

Problems solved by technology

The technical problem addressed in this patented text relates to improving the properties of phase changing random access memory (RAM)-based devices such as phase changes due to their use of specific types of conductive media called silicon or tin sulfide instead of traditional semiconductor elements like indium gallium arsenic zinc oxide (IGZO)). These composites offer better resistances than existing RAMs while still being able to maintain good data even when they're turned off completely during operation.

Method used

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  • Silicon-tin selenide nano multilayer composite phase change thin film material for phase change memory
  • Silicon-tin selenide nano multilayer composite phase change thin film material for phase change memory
  • Silicon-tin selenide nano multilayer composite phase change thin film material for phase change memory

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Effect test

Embodiment 1

[0039] Si / SnSe prepared in this embodiment 2 The total thickness of the nanocomposite multilayer phase change film material is about 100nm, and the specific structures are [Si(4nm) / SnSe 2 (5nm)] 11 、[Si(8nm) / SnSe 2 (5nm)] 8 、[Si(12nm) / SnSe 2 (5nm)] 6 、[Si(16nm) / SnSe 2 (5nm)] 5 、[Si(20nm) / SnSe 2 (5nm)] 4 .

[0040] The preparation steps are:

[0041] 1. Clean SiO2 2 / Si(100) substrate, cleaning the surface and back, removing dust particles, organic and inorganic impurities:

[0042] (a) Strong ultrasonic cleaning in acetone solution for 3-5 minutes, then rinse with deionized water;

[0043] (b) Strong ultrasonic cleaning in ethanol solution for 3-5 minutes, then rinse with deionized water, high-purity N 2 Blow dry the surface and back;

[0044] (c) Dry the water vapor in an oven at 120°C for about 20 minutes.

[0045] 2. Preparation of [Si(a) / SnSe by radio frequency sputtering method 2 (b)] x Film preparation:

[0046] (a) Install Si and SnSe 2 Sputter the ta...

Embodiment 2

[0058] Si / SnSe prepared in this embodiment 2 The total thickness of the nanocomposite multilayer phase change film material is about 80nm, and the specific structures are [Si(3nm) / SnSe 2 (4nm)] 11 、[Si(6nm) / SnSe 2 (4nm)] 8 、[Si(10nm) / SnSe 2 (4nm)] 6 、[Si(13nm) / SnSe 2 (4nm)] 5 、[Si(16nm) / SnSe 2 (4nm)] 4 .

[0059] The preparation steps are:

[0060] 1. Clean SiO2 2 / Si(100) substrate, cleaning the surface and back, removing dust particles, organic and inorganic impurities:

[0061] (a) Strong ultrasonic cleaning in acetone solution for 3-5 minutes, then rinse with deionized water;

[0062] (b) Strong ultrasonic cleaning in ethanol solution for 3-5 minutes, then rinse with deionized water, high-purity N 2 Blow dry the surface and back;

[0063] (c) Dry the water vapor in an oven at 120°C for about 20 minutes.

[0064] 2. Prepare [Si(a) / SnSe by magnetron sputtering method 2 (b)] x Film preparation:

[0065] (a) Install Si and SnSe 2 Sputter the target, and vacu...

Embodiment 3

[0076] Si / SnSe prepared in this embodiment 2 The total thickness of the nanocomposite multilayer phase change film material is about 200nm, and the specific structures are [Si(8nm) / SnSe 2 (10nm)] 11 、[Si(16nm) / SnSe 2 (10nm)] 8 、[Si(24nm) / SnSe 2 (10nm)] 6 、[Si(32nm) / SnSe 2 (10nm)] 5 、[Si(40nm) / SnSe 2 (10nm)] 4 .

[0077] The preparation steps are:

[0078] 1. Clean SiO2 2 / Si(100) substrate, cleaning the surface and back, removing dust particles, organic and inorganic impurities:

[0079] (a) Strong ultrasonic cleaning in acetone solution for 3-5 minutes, then rinse with deionized water;

[0080] (b) Strong ultrasonic cleaning in ethanol solution for 3-5 minutes, then rinse with deionized water, high-purity N 2 Blow dry the surface and back;

[0081] (c) Dry the water vapor in an oven at 120°C for about 20 minutes.

[0082] 2. Preparation of [Si(a) / SnSe by radio frequency sputtering method 2 (b)] x Film preparation:

[0083] (a) Install Si and SnSe 2 Sputter ...

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Abstract

The invention relates to a Si/SnSe2 selenide nano multilayer composite phase change thin film material for a phase change memory with low operation current. A multilayer film structure is formed by alternatively arraying a single-layer Si thin film and a single-layer SnSe2 thin film in the Si/SnSe2 selenide nano multilayer composite phase change thin film material; the thickness of the single-layer Si thin film is 3-40 nm and the thickness of the single-layer SnSe2 thin film is 4-10 nm; and the total thickness of the Si/SnSe2 selenide nano multilayer composite phase change thin film material is 75-210 nm. The phase change memory based on the Si/SnSe2 selenide nano multilayer composite phase change thin film material disclosed by the invention has the advantage of extremely low operation current; and meanwhile, the keeping capability of data is stronger and the Si/SnSe2 selenide nano multilayer composite phase change thin film material can be used for the phase change memory with low operation current.

Description

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Claims

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Application Information

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Owner TONGJI UNIV
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