Method for detecting defects of storage array local bit line

Abstract

The invention discloses a method for detecting defects of a storage array local bit line, which comprises the following steps: a selectivity voltage by using a detection circuit is provided, the selectivity voltage can be taken as drain bias of bit line of the storage array for carrying out read operation, the arrangement of the storage array takes a first voltage as drain bias, and the selectivity voltage is higher than the first voltage, and whether leakage current corresponding to the selectivity voltage which can be taken as drain bias exists or not, and the existence of the leakage current expresses the manufacture defects between the bit line of the storage array and the other element of the storage array. The invention also provides a detection apparatus corresponding to the detection method.

Description

technical field [0001] Embodiments of the present invention relate to the manufacture of a semiconductor device, and more particularly to a method of detecting a manufacturing defect of a semiconductor device, such as a local bit-line (local bit-line) in a semiconductor device of a memory array. line) defects. Background technique [0002] Since the advent of computers, the manufacture of electronic devices, such as calculator devices, communication devices, and memory devices, has been steadily moving towards size reduction and function enhancement. When maintaining or improving the functions of electronic devices, in order to reduce the size of these electronic devices, the size of components in the electronic devices must also be reduced. Since many components in electronic devices are made of semiconductor materials, in some cases, these semiconductor materials must be provided by the structure of the semiconductor substrate. Semiconductor substrates can be used to man...

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