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Epitaxial structure and preparation method thereof

A technology of structure and epitaxy, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of high cost, complicated process, pollution of the epitaxial growth surface of sapphire substrate, etc., achieve good conductivity and reduce preparation Cost, effect of wide use

Active Publication Date: 2014-12-31
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the prior art, microelectronic processes such as photolithography are usually used to form grooves on the surface of the sapphire substrate to form a non-flat epitaxial growth surface.
This method is not only complicated in process and high in cost, but also pollutes the epitaxial growth surface of the sapphire substrate, thereby affecting the quality of the epitaxial structure.

Method used

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  • Epitaxial structure and preparation method thereof
  • Epitaxial structure and preparation method thereof
  • Epitaxial structure and preparation method thereof

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preparation example Construction

[0020] See figure 1 , The first embodiment of the present invention provides a method for preparing the epitaxial structure 10, which specifically includes the following steps:

[0021] S11, a substrate 100 is provided, and the substrate 100 has an epitaxial growth surface 101 supporting epitaxial growth;

[0022] S12, suspending a carbon nanotube layer 102 on the epitaxial growth surface 101;

[0023] S13, growing an epitaxial layer 104 on the epitaxial growth surface 101 to coat the carbon nanotube layer 102.

[0024] In step S11, the substrate 100 provides an epitaxial growth surface 101 of the epitaxial layer 104. The epitaxial growth surface 101 of the substrate 100 is a molecularly smooth surface, and impurities such as oxygen or carbon are removed. The substrate 100 may have a single-layer or multi-layer structure. When the substrate 100 has a single-layer structure, the substrate 100 may be a single crystal structure and has a crystal plane as the epitaxial growth surface 10...

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Abstract

The invention provides a preparation method for epitaxial structure. The preparation method comprises the following steps: providing a substrate, the substrate being provided with an epitaxial growth face; disposing an impending carbon nano tube layer above the epitaxial growth face of the substrate; and growing a epitaxial layer on the epitaxial growth face which is provided with the carbon nano tube layer. The invention further provides an epitaxial structure.

Description

Technical field [0001] The invention relates to an epitaxial structure and a preparation method thereof. Background technique [0002] The epitaxial structure formed of GaN, InGaN and AlGaN-based nitrides is a semiconductor structure that has attracted much attention in recent years. It has a continuously variable direct band gap, excellent physical and chemical stability, and high saturated electron mobility. Make it a preferred semiconductor structure for optoelectronic devices such as lasers and light-emitting diodes and microelectronic devices. [0003] Due to the limitations of GaN and other growth technologies, most large-area GaN semiconductor layers are grown on other substrates such as sapphire. Due to the different lattice constants of gallium nitride and sapphire substrates, the gallium nitride epitaxial layer has many dislocation defects. The prior art provides a method to improve the above-mentioned shortcomings, which uses a non-flat sapphire substrate to epitaxiall...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/20H01L33/00H01L29/06H01L33/20
Inventor 魏洋范守善
Owner TSINGHUA UNIV