RCD absorption circuit of NPC-type three-level switch module

Abstract

The invention discloses a RCD absorption circuit of a NPC-type three-level switch module. The NPC-type three-level IGBT module comprises a first inner tube Q1, a second inner tube Q2, a third inner tube Q3, and a fourth inner tube Q4. The absorption circuit comprises a first clamping circuit used to reduce stresses of the second inner tube Q2, and a second clamping circuit used to reduce the stresses of the third inner tube Q3. The RCD absorption circuit of the NPC-type three-level switch module can effectively reduce voltage stresses of the NPC-type three-level inner tubes.

Description

technical field [0001] The invention relates to a switch module, in particular to an RCD absorbing circuit of an NPC type 3-level switch module. Background technique [0002] Today's power electronic equipment is increasingly high-frequency, which requires switching devices to be able to turn on and off quickly. The fast turn-on and turn-off brings additional problems such as switching device stress and EMC. How to reduce the stress of switching devices and reduce EMI noise has become a difficult problem in the field of power electronics engineering. [0003] As more and more switching device suppliers tend to integrate switching devices into a switching module with independent functions (such as IGBT module, Mos module, IPM module, etc.), the problems in the application of these switching modules have become more prominent. . [0004] The following takes the IGBT module as an example to discuss, and the principles of other modules are the same. [0005] Existing NPC typ...

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Problems solved by technology

But adjusting the drive resistance means an increase in switching loss, which means the sacrifice of system efficiency

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