A kind of igbt with terminal deep level impurity layer

A deep-level impurity and terminal technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of device avalanche breakdown, large conduction loss, and small conduction voltage drop, so as to improve the turn-off characteristics of the device, Effect of reducing high-temperature leakage current and improving shutdown characteristics
CN102779840BInactive Publication Date: 2014-10-15UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
4 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
UNIV OF ELECTRONICS SCI & TECH OF CHINA
Publication Date
2014-10-15
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention relates to an IGBT with a terminal deep-level impurity layer, which belongs to the technical field of semiconductor power devices. Based on the traditional Planar FS-IGBT, the invention injects a deep energy level impurity layer (15) into the terminal drift region (14). In the deep-level impurity layer (15), as the temperature of the device increases, the ionization degree of the deep-level impurities increases, and the impurity concentration increases significantly. When the IGBT is turned off, the increased carrier concentration in the terminal drift region is effectively reduced. The hole emission efficiency of the P+ collector region in the small terminal region reduces the parasitic PNP transistor αPNP, thereby effectively reducing the high-temperature leakage current of the device; the increased electron concentration in the drift region and the accelerated recombination of holes injected into the P+ collector region, and deep energy The level impurity itself is a recombination center, further accelerating the recombination of electrons and holes, effectively improving the turn-off characteristics and improving the reliability of the IGBT.
Need to check novelty before this filing date? Find Prior Art

Description

Technical field

[0001] The invention belongs to the technical field of semiconductor power devices, and relates to an insulated gate bipolar transistor (IGBT). Background technique

[0002] IGBT not only has the advantages of MOSFET's high input impedance, low control power, simple drive circuit, and high switching speed, but also has the advantages of high current density of bipolar power transistors, reduced saturation voltage, and strong current handling capabilities. Therefore, the three major characteristics of IGBT power devices are high voltage, high current, and high speed, which are unmatched by other power devices. Therefore, it is a very ideal switching device in the field of power electronics. IGBT products combine the three major technical advantages of high frequency, high voltage and high current. At the same time, IGBT can realize energy saving and emission reduction, and has good environmental protection benefits. IGBT is widely used in the power field , Consume...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More