Method for forming dielectric layer
A dielectric layer and dielectric layer surface technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as changes in the capacitance value of ultra-low-k dielectric layers, serious problems in the stability and reliability of semiconductor devices, etc. , to achieve the effect of preventing k value drift and large changes in capacitance, ensuring stability and reliability
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no. 1 example
[0031] Figure 6 to Figure 11 It is a schematic diagram of the first embodiment of forming a semiconductor device including an ultra-low-k dielectric layer according to the present invention (taking the formation of a metal wiring layer as an example). Such as Image 6 As shown, a semiconductor substrate 100 is provided. Structures such as transistors, capacitors, and metal wiring layers are usually formed on the semiconductor substrate 100 through previous processes;
[0032] In this embodiment, the dielectric layer 200 is an ultra-low-k dielectric layer with a dielectric constant of 2.2 to 2.59, and the ultra-low-k dielectric layer is a porous material; the material of the ultra-low-k dielectric layer is SiOCH, and the SiOCH The spacing between atoms is relatively sparse; the method of forming an ultra-low-k dielectric layer is chemical vapor deposition.
[0033] Such as Figure 7 As shown, an anti-reflection layer 300 is formed on the surface of the dielectric layer 200 ...
no. 2 example
[0045] Figure 12 to Figure 18 It is a schematic diagram of a second embodiment of forming a semiconductor device including an ultra-low-k dielectric layer according to the present invention (taking the formation of a conductive plug of a dual damascene structure as an example). Such as Figure 12 As shown, a semiconductor substrate 1000 is provided. Structures such as transistors, capacitors, and metal wiring layers are usually formed on the semiconductor substrate 1000 through previous processes;
[0046] In this embodiment, the dielectric layer 2000 is an ultra-low-k dielectric layer with a dielectric constant of 2.2 to 2.59, and the ultra-low-k dielectric layer is a porous material; the material of the ultra-low-k dielectric layer is SiOCH, and the SiOCH The spacing between atoms is relatively sparse; the method of forming an ultra-low-k dielectric layer is chemical vapor deposition.
[0047] Such as Figure 13 As shown, a first anti-reflection layer 3000 is formed on t...
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Abstract
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