Formation method of dielectric layer
A dielectric layer and dielectric constant technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as changes in the capacitance value of ultra-low-k dielectric layers, and prevent k-value drift and large changes in capacitance. Guarantee stability and reliability, enhance the effect of bonding force
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no. 1 example
[0033] Figure 6 to Figure 11 It is a schematic diagram of the first embodiment of forming a semiconductor device including an ultra-low-k dielectric layer according to the present invention (taking the formation of a metal wiring layer as an example). Such as Figure 6 As shown, a semiconductor substrate 100 is provided. Structures such as transistors, capacitors, and metal wiring layers are usually formed on the semiconductor substrate 100 through previous processes; a dielectric layer 200 is deposited on the semiconductor substrate 100 .
[0034] In this embodiment, the dielectric layer 200 is an ultra-low-k dielectric layer with a dielectric constant of 2.2 to 2.59; the material of the ultra-low-k dielectric layer is SiCOH, and the interatomic spacing of the SiCOH is relatively sparse; forming an ultra-low The method of the k-dielectric layer is chemical vapor deposition.
[0035] Such as Figure 7 As shown, the first treatment 300 is performed on the dielectric layer 2...
no. 2 example
[0043] Figure 11 to Figure 16 It is a schematic diagram of a second embodiment of forming a semiconductor device including an ultra-low-k dielectric layer according to the present invention (taking the formation of a conductive plug of a dual damascene structure as an example). Such as Figure 12 As shown, a semiconductor substrate 1000 is provided, and structures such as transistors, capacitors, and metal wiring layers are usually formed on the semiconductor substrate 1000 through previous processes; a dielectric layer 2000 is deposited on the semiconductor substrate 1000 .
[0044] In this embodiment, the dielectric layer 2000 is an ultra-low-k dielectric layer with a dielectric constant of 2.2 to 2.59; the material of the ultra-low-k dielectric layer is SiCOH, and the interatomic spacing of SiCOH is relatively sparse; forming an ultra-low The method of the k-dielectric layer is chemical vapor deposition.
[0045] Such as Figure 12 As shown, the first treatment 3000 is ...
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