Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Memristor-based logical gate circuit

A technology of memristors and gate circuits, applied in logic circuits, logic circuits using basic logic circuit components, logic circuits using specific components, etc., can solve the problems of low integration, easy loss when power off, and high power consumption. To achieve the effect of overcoming bottleneck problems, reducing costs, improving reliability and flexibility

Inactive Publication Date: 2012-12-05
HUAZHONG UNIV OF SCI & TECH
View PDF3 Cites 48 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the defects of the prior art, the object of the present invention is to provide a memristor-based logic gate circuit, which aims to solve the problems of low integration, high power consumption and easy loss when power-off of the existing CMOS-based gate circuit

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memristor-based logical gate circuit
  • Memristor-based logical gate circuit
  • Memristor-based logical gate circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0022] In the embodiment of the present invention, the memristor is used as a core component of three gate circuits of AND, OR, and NOT, and provides carriers with different densities to control the voltage at the output terminal. The memristor is composed of mixed semiconductor materials, including doped semiconductors in a low-resistance state and intrinsic semiconductors in a high-resistance state. Memristor resistance is described by the relationship between magnetic flux and charge: A single linear impurity drift memristor is composed of two continuously variable resistors in series, and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a memristor-based logical gate circuit. An and-gate circuit comprises a first memristor, a second memristor, a third memristor, a single-directional conduction element and a first resistor; the input end of the first memristor is used as a first input end of the and-gate circuit, and the input end of the second memristor is used as a second input end of the and-gate circuit; and the output end of the third memristor is used as an output end of the and-gate circuit. An or-gate circuit comprises a fourth memristor, a fifth memristor and a second resistor; the input end of the fourth memristor is used as a first input end of the or-gate circuit, and the input end of the fifth memristor is used as a second input end of the or-gate circuit; and one end of the second resistor is connected with the output end of the fourth memristor and the output end of the fifth memristor, and the other end of the second resistor is used as an output end of the or-gate circuit. A not-gate circuit comprises a sixth memristor, a seventh memristor, a three-state gate and a third resistor; the input end of the sixth memristor is used as an input end of the not-gate circuit; and the output end of the seventh memristor is used as an output end of the not-gate circuit.

Description

technical field [0001] The invention belongs to the technical field of digital circuits, and more specifically relates to a memristor-based logic gate circuit. Background technique [0002] From the day the computer was invented, scientists and technologists have dreamed of a day when computers could work like the human brain. Since the world's first memristor was developed by Hewlett-Packard Labs in the United States in April 2008, which confirmed the existence of the "fourth electronic component" memristor, memristors can provide outstanding memory and logic functions through simple packaging. The performance has attracted the attention of scientists, and using it to simulate brain neuron synapses has become the goal of many scientists. In 2009, a research team at the University of Michigan in the United States produced a memristor circuit that simulates brain synapses, which confirmed the previous assumption that memristors can be used in the production of computer neura...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03K19/173H03K19/18
CPCG11C13/0007
Inventor 余国生陈进才周功业
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com