Memristor-Based Logic Gates

Abstract

The invention discloses a memristor-based logic gate circuit. A NOT-gate circuit comprises a first multiplexer, a second multiplexer, a first resistor, a first memristor and a first earthing switch; one path of the second multiplexer is used as the NOT-gate input end; one end of the first resistor is used as the NOT-gate output end; an NAND-gate circuit comprises a third multiplexer, a fourth multiplexer, a fifth multiplexer, a second resistor, a second memristor, a third memristor, a second earthing switch and a third earthing switch; one path of the fourth multiplexer is used as the NAND-gate first input end; one path of the fifth multiplexer is used as the NAND-gate second input end; one end of the second resistor is used as the NAND-gate output end; a NOR-gate circuit comprises a sixth multiplexer, a seventh multiplexer, an eighth multiplexer, a third resistor, a fourth memristor and a fifth memristor; one path of the seventh multiplexer is used as the NOR-gate first input end; one path of the eighth multiplexer is used as the NOR-gate second input end; and one end of the third resistor is used as the NOR-gate output end.

Description

technical field [0001] The invention belongs to the technical field of digital circuits, and more specifically relates to three memristor-based logic gate circuits. Background technique [0002] Memristor was proposed by Cai Shaotang, a scientist at the University of California, Berkeley, in 1971. Professor Cai Shaotang predicted from the perspective of symmetry that in addition to capacitance, inductance and resistance, electronic circuits should also have a fourth basic component-memristor. Cai Shaotang pointed out that voltage v, current i, charge q and magnetic flux There should be six mathematical relationships between these four basic circuit variables: current is defined as the derivative of charge with respect to time i(t)=dq(t) / dt; voltage is the derivative of magnetic flux with respect to time Resistance is defined as the rate of change of voltage with current R = dv / di; capacitance is defined as the rate of change of charge with voltage C = dq / dv; inductance is...

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Problems solved by technology

[0005] Aiming at the defects of the prior art, the object of the present invention is to provide a memristor-based logic gate circuit, aiming to use the memristor logic circuit to solve the problems of low integration, high power consumption and poor reliability of existing CMOS-based gate circuits. question

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