Memristor-based logic gate circuit

A technology of logic circuits and memristors, which is applied to logic circuits with logic functions, instruments, static memories, etc., can solve problems such as high power consumption, low integration, and poor reliability, and achieve a small number of memristors and reduce The effect of simple cost and operation steps

Active Publication Date: 2016-02-24
HUAZHONG UNIV OF SCI & TECH
View PDF4 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the defects of the prior art, the object of the present invention is to provide a memristor-based logic gate circuit, aiming to use the me

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memristor-based logic gate circuit
  • Memristor-based logic gate circuit
  • Memristor-based logic gate circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0022] In the embodiment of the present invention, the memristor is used as the core component of the NOT, NAND, and NOR gate circuits, from figure 1 It can be seen that when the forward voltage applied to both ends of the memristor is greater than or equal to the first threshold 4V, the memristor changes from a high resistance state to a low resistance state, and when the negative voltage appli...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a memristor-based logic gate circuit. A NOT-gate circuit comprises a first multiplexer, a second multiplexer, a first resistor, a first memristor and a first earthing switch; one path of the second multiplexer is used as the NOT-gate input end; one end of the first resistor is used as the NOT-gate output end; an NAND-gate circuit comprises a third multiplexer, a fourth multiplexer, a fifth multiplexer, a second resistor, a second memristor, a third memristor, a second earthing switch and a third earthing switch; one path of the fourth multiplexer is used as the NAND-gate first input end; one path of the fifth multiplexer is used as the NAND-gate second input end; one end of the second resistor is used as the NAND-gate output end; a NOR-gate circuit comprises a sixth multiplexer, a seventh multiplexer, an eighth multiplexer, a third resistor, a fourth memristor and a fifth memristor; one path of the seventh multiplexer is used as the NOR-gate first input end; one path of the eighth multiplexer is used as the NOR-gate second input end; and one end of the third resistor is used as the NOR-gate output end.

Description

technical field [0001] The invention belongs to the technical field of digital circuits, and more specifically relates to three memristor-based logic gate circuits. Background technique [0002] Memristor was proposed by Cai Shaotang, a scientist at the University of California, Berkeley, in 1971. Professor Cai Shaotang predicted from the perspective of symmetry that in addition to capacitance, inductance and resistance, electronic circuits should also have a fourth basic component-memristor. Cai Shaotang pointed out that voltage v, current i, charge q and magnetic flux There should be six mathematical relationships between these four basic circuit variables: current is defined as the derivative of charge with respect to time i(t)=dq(t) / dt; voltage is the derivative of magnetic flux with respect to time Resistance is defined as the rate of change of voltage with current R = dv / di; capacitance is defined as the rate of change of charge with voltage C = dq / dv; inductance is...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H03K19/20G11C13/00
Inventor 沈轶徐博文王小平陈凯
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap