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A method for cleaning silicon wafers after chemical mechanical polishing

A chemical machinery and silicon wafer technology, applied in the field of cleaning, can solve the problems of poor cleaning effect and accelerate the dissolution of metal pollutants, and achieve the effect of improving yield, solving cleaning problems, and accelerating dissolution.

Active Publication Date: 2016-12-14
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0009] The invention provides a method for cleaning silicon wafers after chemical mechanical polishing, which can be used to accelerate the dissolution of metal pollutants, solve the above-mentioned problem of poor cleaning effect on the surface of silicon wafers after chemical mechanical polishing, and improve chemical Mechanical Polishing Quality

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  • A method for cleaning silicon wafers after chemical mechanical polishing

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Embodiment 1

[0036] Embodiments 1, 2, 3, 4, and 5: After the silicon wafer is polished with a polishing solution containing silver ions, it is cleaned by different cleaning methods. According to the test results, the cleaning solution can quickly remove the silver ion residue on the surface of the silicon wafer. Solved the difficult problem that silver ion residue is difficult to remove in comparative example 1.

[0037] Example 1 shows that the cleaning solution can be used in the ultrasonic cleaning procedure of the mirra polishing machine to obtain a good technical effect, and Example 2 shows that the cleaning solution can be used in an oscillation type cleaning procedure to obtain a good technical effect. Example 3 shows that the cleaning solution can directly flow onto the polishing pad for polishing and cleaning. Taking the mirra machine as an example, it can be directly polished and cleaned on the third polishing table (platen) to effectively remove the residue of silver ions. Exam...

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Abstract

The invention provides a method for cleaning a chemically mechanically polished silicon wafer by using a cleaning solution containing an oxidant, bisulfate, sulfate and thiourea or a derivative of the thiourea. The chemical mechanical polishing cleaning solution of the present invention can effectively accelerate the dissolution of metal pollutants, solve the cleaning problem of silver ion pollution on the surface of silicon wafers, eradicate the diffusion of mobile metal ions, improve the reliability of chips, and improve the production efficiency. Rate.

Description

technical field [0001] The invention relates to a cleaning method, in particular to a cleaning method for silicon chips after chemical mechanical polishing. Background technique [0002] Chemical mechanical polishing is the most effective method for global planarization of silicon wafers in the integrated circuit manufacturing process. After chemical mechanical polishing, it is necessary to clean the surface of the silicon wafer in time to remove the residue of silicon dioxide caused by the polishing process, and effectively suppress the residues of organic matter, metal oxides, and ion pollution. [0003] The standard RCA cleaning method is the most commonly used and most typical in the industry, and is still the most commonly used wet chemical cleaning method. [0004] The standard RCA cleaning method uses hydrogen peroxide + ammonia water (SC-1 solution) and hydrogen peroxide + hydrochloric acid (SC-2 solution) alternately, which can effectively remove some residual sili...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/321C11D7/60C11D7/34C11D7/10C11D7/18
Inventor 王晨何华锋
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD