Double poly-crystal plane strain BiCMOS integrated device based on SOI (Silicon On Insulator) substrate and preparation method

Abstract

The invention discloses a double poly-crystal plane strain BiCMOS integrated device based on a SOI (Silicon On Insulator) substrate and a preparation method. The preparation method comprises the following steps: preparing a deep slot isolator on the SOI substrate; forming a collector contact region, a nitride side wall and a base region window; growing SiGe and Poly-Si on the base region, thereby forming a SiGe HBT (Heterojunction Bipolar Transistor) device; etching a slot on a NMOS (N-channel Metal Oxide Semiconductor) device active region, preparing a grid dielectric layer and a grid poly-crystal on the NMOS device active region, thereby forming a NMOS device; etching a slot on a PMOS (P-channel Metal Oxide Semiconductor) device active region and preparing a drain and a grid on the PMOS device active region, thereby forming a PMOS device; and photo-etching a lead, thereby preparing a BiCMOS integrated device and a circuit. According to the preparation method, a BiCMOS integrated circuit with an enhanced property is prepared by adopting a self-aligning technology and fully utilizing the characteristics that the electronic mobility of a spreading strain Si material is higher than that of a semiconductor Si material and the hole mobility of a compressive strain SiGe material is higher than that of the semiconductor Si material.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, and in particular relates to the preparation of a double polycrystalline plane strain BiCMOS integrated device based on an SOI substrate by a self-alignment process and a preparation method. Background technique [0002] The integrated circuit is the cornerstone and core of the economic development of the information society. Just as the American engineering and technical circles recently named the fifth electronic technology among the world's 20 greatest engineering technological achievements in the 20th century, "From vacuum tubes to semiconductors and integrated circuits, everything has It has become the cornerstone of intelligent work in various industries in the contemporary era." The integrated circuit is one of the typical products that can best reflect the characteristics of the knowledge economy; at present, the electronic information industry based on the integr...

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Problems solved by technology

Although GaAs and InP-based compound devices have superior frequency characteristics, their preparation process is more complicated than Si process, high cost, difficult to prepare large-diameter single crystal, low mechanical strength, poor heat dissipation performance, incompatibility with Si process and lack of SiO 2 Such passivation layer and other factors limit its wide application and development.

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