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Method for forming opening

A technology of hard mask and anti-reflection layer, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of arc contour generated by contact holes

Active Publication Date: 2012-12-19
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Therefore, the main purpose of the present invention is to provide a method for making openings such as contact holes, so as to solve the problems such as the circular arc profile of subsequent contact holes in the current process due to the etching gas.

Method used

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Embodiment Construction

[0024] Please refer to Figure 1 to Figure 3 , Figure 1 to Figure 3 A schematic diagram of the process of forming openings in a preferred embodiment of the present invention. Such as figure 1 As shown, firstly, a semiconductor substrate 60 is provided, such as a substrate made of monocrystalline silicon (monocrystalline silicon), gallium arsenide (GaAs) or other semiconductor materials well known in the prior art. Then, at least one metal oxide semiconductor transistor (not shown), such as a P-type metal oxide semiconductor (PMOS) transistor, an N-type metal oxide semiconductor (NMOS) transistor, is formed on the surface of the semiconductor substrate 60 according to a standard metal oxide semiconductor transistor process. Or complementary metal oxide semiconductor (CMOS) transistors, or other various semiconductor components. Among them, the metal oxide semiconductor transistors can each have a standard transistor structure such as a gate structure, a spacer, a lightly dop...

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Abstract

The invention discloses a method for forming an opening preferably. The method comprises the following steps: forming a hard mask containing carbon on the surface of a semiconductor substrate, and then carrying out an etching process on the hard mask with air which does not contain oxygen atom, so as to form a first opening in the hard mask.

Description

technical field [0001] The invention relates to a method for making an opening, especially a method for making a contact hole-like opening in a hard mask and avoiding the arc-shaped profile of the side wall of the contact hole during the manufacturing process. Background technique [0002] With the advancement of semiconductor technology, the miniaturization of microelectronic components has entered the sub-micron level, and the greater the density of semiconductor components on a single chip, the smaller the spacing between components, which makes the production of contact holes easier more and more difficult. At present, it is still the direction of the industry to successfully dig a high aspect ratio contact hole in the dielectric layer to expose a sufficient area of ​​the conductive area below. [0003] Known methods for forming contact holes generally firstly provide a semiconductor substrate provided with a plurality of semiconductor elements, wherein the semiconducto...

Claims

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Application Information

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IPC IPC(8): H01L21/768
Inventor 张峰溢林义博廖俊雄蔡尚元冯郅文吕水烟徐庆斌
Owner UNITED MICROELECTRONICS CORP