A kind of trench MOS structure semiconductor device and its preparation method
A MOS structure and semiconductor technology, which is applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as inability to guarantee device performance, and achieve the effect of omitting layout margins, compact product structure, and reducing production costs.
Active Publication Date: 2016-12-14
北海惠科半导体科技有限公司
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Problems solved by technology
[0004] In the traditional manufacturing process, there is a risk of polysilicon etching back exceeding the source junction depth, and the performance of the device cannot be guaranteed; at the same time, three photolithography processes and four photolithography processes have significant impact on the line width and overlay level of the photolithography process. higher requirements
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[0037] figure 2 A schematic cross-sectional view of a super barrier rectifier diode manufactured for applying a trench MOS structure semiconductor device of the present invention, combined below figure 2 The semiconductor device of the present invention will be described in detail.
[0038] A super barrier rectifier diode, comprising: a substrate layer 1, which is a semiconductor silicon material of N conductivity type, on the lower surface of the substrate layer 1, an electrode is drawn out through a metal layer 11 on the lower surface; a drain region 2, located on the substrate layer 1, is The semiconductor silicon material of N conductivity type; the body region 3 is located on the drain region 2, and the body region 3 is a semiconductor silicon material of P conductivity type; the body contact region 7 is located in the upper surface of the body region 3 and is doped with high-concentration impurities. The semiconductor silicon material of impurity P conductivity type; ...
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The invention discloses a semiconductor device with a trench MOS structure. Gate oxide is grown on the lower part of the inner wall of the trench, polysilicon is filled in the trench, and a body contact region, a source region, and a body Region and drain region, the semiconductor device of the present invention is the basic structure of the super barrier rectifier; the present invention also provides a preparation method of the semiconductor device. Taking the manufacture of a super barrier rectifier as an example by applying the semiconductor device and preparation method of the present invention, not only can the manufacture of the device be realized through two photolithography processes, but also the conduction current density of the device can be improved.
Description
technical field [0001] The present invention relates to a semiconductor device with a trench MOS structure, which is the basic structure of a super barrier rectifier and can be used to manufacture semiconductor devices such as a super barrier rectifier. The invention also relates to a method for preparing a semiconductor device with a trench MOS structure . Background technique [0002] Semiconductor devices with a trench MOS structure have become an important trend in the development of devices. With the continuous reduction of cost requirements and the continuous increase of current density requirements of power devices, the continuous reduction of cell size and reduction of photolithography times have become the development trend of devices. trend. [0003] The cross-sectional view of a traditional super barrier rectifier diode is shown in image 3 As shown, its basic structure is a semiconductor device with a trench MOS structure such as figure 1 As shown, the gate ox...
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IPC IPC(8): H01L29/78H01L29/06H01L21/336H01L21/28
Inventor 朱江
Owner 北海惠科半导体科技有限公司