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Channel metal-oxide semiconductor (MOS) structural semiconductor device and preparation method thereof

A MOS structure and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as the inability to guarantee device performance, and achieve the goal of omitting layout margins, reducing production costs, and improving on-current density. Effect

Active Publication Date: 2012-10-03
北海惠科半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the traditional manufacturing process, there is a risk of polysilicon etching back exceeding the source junction depth, and the performance of the device cannot be guaranteed; at the same time, three photolithography processes and four photolithography processes have significant impact on the line width and overlay level of the photolithography process. higher requirements

Method used

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  • Channel metal-oxide semiconductor (MOS) structural semiconductor device and preparation method thereof
  • Channel metal-oxide semiconductor (MOS) structural semiconductor device and preparation method thereof
  • Channel metal-oxide semiconductor (MOS) structural semiconductor device and preparation method thereof

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Embodiment 1

[0039] figure 1 It is a trench MOS structure semiconductor device of the present invention, Figure 4 A schematic cross-sectional view of a super barrier rectifier diode manufactured for applying a trench MOS structure semiconductor device of the present invention, combined below figure 1 and Figure 4 The semiconductor device of the present invention will be described in detail.

[0040] A super barrier rectifier diode, comprising: a substrate layer 1, which is a semiconductor silicon material of N conductivity type, on the lower surface of the substrate layer 1, an electrode is drawn out through a metal layer 11 on the lower surface; a drain region 2, located on the substrate layer 1, is The semiconductor silicon material of N conductivity type; the body region 3 is located above the drain region 2, and the body region 3 is a semiconductor silicon material of P conductivity type; the source region 4 is located in the upper surface of the body region 3 and is semiconducto...

Embodiment 2

[0054] figure 2 It is a trench MOS structure semiconductor device of the present invention, Figure 5 A schematic cross-sectional view of a super barrier rectifier diode manufactured for applying a trench MOS structure semiconductor device of the present invention, combined below figure 2 and Figure 5 The semiconductor device of the present invention will be described in detail.

[0055] A super barrier rectifier, comprising: a substrate layer 1, which is an N conductive type semiconductor silicon material, on the lower surface of the substrate layer 1, an electrode is drawn out through a metal layer 11 on the lower surface; a drain region 2, located on the substrate layer 1, is N The semiconductor silicon material of conductivity type; the body region 3 is located above the drain region 2, and the body region 3 is a semiconductor silicon material of P conductivity type; the source region 4 is located in the surface of the body region 3, close to the trench, and is of N c...

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Abstract

The invention discloses a channel metal-oxide semiconductor (MOS) structural semiconductor device. A gate oxide is grown on the lower part of the inner wall of a channel; polysilicon is filled in the channel; and a source region, a body region and a drain region are formed in a silicon body on the side of the channel from top to bottom. The semiconductor device provided by the invention is the basic structure of a power MOS transistor and a super barrier rectifier. The invention also provides a preparation method for the semiconductor device. The super barrier rectifier is manufactured by using the semiconductor device and the preparation method provided by the invention, a secondary photoetching process in the conventional manufacturing method for the super barrier rectifier can be omitted, simultaneously the source region of the device is formed by a self-alignment method, and the reliability of the device is improved.

Description

technical field [0001] The invention relates to a trench MOS structure semiconductor device, which is the basic structure of a power MOS transistor and a super barrier rectifier, and can be used to manufacture semiconductor devices such as a power MOS transistor and a super barrier rectifier. The invention also relates to a trench A method for manufacturing a trench MOS structure semiconductor device. Background technique [0002] Semiconductor devices with a trench MOS structure have become an important trend in the development of devices. With the continuous reduction of cost requirements and the continuous increase of current density requirements of power devices, the continuous reduction of cell size and reduction of photolithography times have become the development trend of devices. trend. [0003] The cross-sectional view of a traditional super barrier rectifier diode is shown in Figure 6 As shown, its basic structure is a semiconductor device with a trench MOS stru...

Claims

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Application Information

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IPC IPC(8): H01L29/861H01L29/06H01L29/78H01L21/329
Inventor 朱江
Owner 北海惠科半导体科技有限公司