A kind of trench MOS structure semiconductor device and its preparation method
A semiconductor and trench technology, applied in the field of fabrication of trench MOS structure semiconductor devices, can solve problems such as inability to guarantee device performance, and achieve the effects of omitting layout margins, compact product structure, and reducing production costs
Active Publication Date: 2016-12-14
北海惠科半导体科技有限公司
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Problems solved by technology
[0004] In the traditional manufacturing process, there is a risk of polysilicon etching back exceeding the source junction depth, and the performance of the device cannot be guaranteed; at the same time, three photolithography processes and four photolithography processes have significant impact on the line width and overlay level of the photolithography process. higher requirements
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[0034] figure 1 It is a trench MOS structure semiconductor device of the present invention, image 3 A schematic cross-sectional view of a super barrier rectifier diode manufactured for applying a trench MOS structure semiconductor device of the present invention, combined below figure 1 with image 3 The semiconductor device of the present invention will be described in detail.
[0035] A super barrier rectifier, comprising: a substrate layer 1, which is an N conductive type semiconductor silicon material, on the lower surface of the substrate layer 1, an electrode is drawn out through a metal layer 11 on the lower surface; a drain region 2, located on the substrate layer 1, is N The semiconductor silicon material of conductivity type; the body region 3 is located above the drain region 2, and the body region 3 is a semiconductor silicon material of P conductivity type; the source region 4 is located in the surface of the body region 3, close to the trench, and is of N co...
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The invention discloses a semiconductor device with a trench MOS structure. Gate oxide is grown on the lower part of the inner wall of the trench, polysilicon is filled in the trench, and an active region, a body region and a drain region are arranged in the silicon body on the sides of the trench from top to bottom. ; The semiconductor device of the present invention is the basic structure of a super barrier rectifier; the present invention also provides a preparation method of the semiconductor device. Applying the semiconductor device and the preparation method of the present invention to manufacture the super barrier rectifier can omit the two photolithography processes in the traditional super barrier rectifier manufacturing method, and at the same time, the source region of the device is formed by a self-alignment method, which improves the reliability of the device.
Description
technical field [0001] The present invention relates to a semiconductor device with a trench MOS structure, which is the basic structure of a super barrier rectifier and can be used to manufacture semiconductor devices such as a super barrier rectifier. The invention also relates to a method for preparing a semiconductor device with a trench MOS structure . Background technique [0002] Semiconductor devices with a trench MOS structure have become an important trend in the development of devices. With the continuous reduction of cost requirements and the continuous increase of current density requirements of power devices, the continuous reduction of cell size and reduction of photolithography times have become the development trend of devices. trend. [0003] The cross-sectional view of a traditional super barrier rectifier diode is shown in Figure 4 As shown, its basic structure is a semiconductor device with a trench MOS structure such as figure 2 As shown, the gate o...
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IPC IPC(8): H01L29/861H01L29/06H01L29/78H01L21/329
Inventor 朱江
Owner 北海惠科半导体科技有限公司