Method for in-situ cleaning MOCVD (metal organic chemical vapor deposition) reaction chamber

Abstract

The embodiment of the invention provides a method for in-situ cleaning a MOCVD (metal organic chemical vapor deposition) reaction chamber. The method comprises the steps as follows: keeping the pressure in the reaction chamber within a preset pressure range; and maintaining cleaning plasma to a preset time range in the reaction chamber so as to completely remove the sediment in the reaction chamber. With the adoption of the method in-situ cleaning MOCVD the reaction chamber provided by the embodiment of the invention, relatively stable organic ligands and associated polymer can be removed; and good effect of cleaning can be achieved relative to the sediment on the surface in the MOCVD reaction chamber at relatively lower temperature can be achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for in-situ cleaning of an MOCVD reaction chamber. Background technique [0002] At present, Metal-organic Chemical Vapor Deposition (MOCVD) technology is widely used to prepare compounds of Group III and V elements (such as GaN, InN, AlN, InGaN, AlGaN, GaP, etc.). In the current state of the art, a major problem in MOCVD reaction chambers after the preparation of compounds of Group III and V elements is the formation of excess solid by-product deposits (such as solid by-product deposits containing carbon organics or metals and their compounds, etc.), these deposits are deposited inside the reaction chamber (such as the shower head, base and inner wall, etc.), resulting in process drift, performance degradation, and easy to prepare in the third stage III In the process of compounding group elements and group V elements, impurities such as particles a...

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Problems solved by technology

[0004] However, on relatively cold surfaces (such as the surface of a water-cooled shower head or the inner wall of a reaction chamber), these excess deposits usually mainly contain relatively Stable organic ligands or associated polymers and metals and their compounds, where these relatively stable organic ligands or associated polymers are mainly high-concentration carbon-containing organic compounds, at this time, this based on simple halides such as Cl 2 , HCl, HBr, etc.) in-situ cleaning methods are not effective in removing deposits from relatively cool surfaces

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