Chemical mechanical grinding method

Abstract

The invention provides a chemical mechanical grinding method. The chemical mechanical grinding method comprises the following steps of grinding and removing a first to-be-ground layer on a wafer by utilizing a fixed particle grinding pad; selecting the wafer with grinding residue; covering a second to-be-ground layer, wherein the material of the second to-be-ground layer is the same as that of the first to-be-ground layer; and grinding and removing the second to-be-ground layer on the wafer. According to the chemical mechanical grinding method provided by the invention, the second to-be-ground layer is covered on the wafer with the grinding residue, the second to-be-ground layer is ground by utilizing the fixed particle grinding pad, the material of the second to-be-ground layer is the same as that of the first to-be-ground layer, and thus the first to-be-ground layer is ground through the same grinding method; and during the process of grinding the second to-be-ground layer, the grinding rate of the fixed particle grinding pad is gradually increased and is up to a stable value, the grinding residue is completely removed by utilizing the grinding rate while the second to-be-ground layer is removed, thus the grinding effect is increased, and the grinding residue is completely removed.

Description

technical field [0001] The invention relates to an integrated circuit manufacturing method, in particular to a chemical mechanical polishing method for improving the polishing effect of a fixed particle polishing pad. Background technique [0002] Electronic systems and circuits contribute significantly to the advancement of modern society and are used in a variety of applications for optimal results. Electronic systems that can provide this optimal result typically include integrated circuits (ICs) on chip wafers. Performing the polishing step in an efficient and sufficient manner is critical for the manufacture of IC wafers. Complex ICs often have many different stacked layers, each layer layered on top of the previous layer and including multiple components interconnected in various ways. When IC components are stacked within said layers, the resulting surface topography of these complex ICs is uneven (for example, they often resemble "mountains" with multiple rises or ...

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Problems solved by technology

[0009] However, due to the adsorption of a large amount of polymer additives 31 on the surface of the grinding stop layer 14, the smaller grinding residue 12 will be wrapped by the polymer additive 31, so that this part of grinding residue 12 cannot be effectively removed, thereby reducing the grinding effect

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