Pixel structure, array substrate and liquid crystal display device

Abstract

The invention discloses a pixel structure, an array substrate and a liquid crystal display device. The pixel structure comprises a plurality of conductive function layers, wherein the function layers comprise a first signal transmission line and a second signal transmission line, which are crossly arranged in different layers; and a parasitic capacitor is formed at the crossing part of the first signal transmission line and the second signal transmission line. The pixel structure further comprises at least one protection capacitor connected in parallel with the parasitic capacitor, wherein the protection capacitor is arranged on one of the function layers, and the breakdown voltage of the protection capacitor is less than that of the parasitic capacitor. According to the invention, the parasitic capacitor between the crossed signal transmission lines is protected from breakdown.

Description

technical field [0001] The invention relates to the technical field of liquid crystal display, in particular to a pixel structure of an array substrate. Background technique [0002] Under the production conditions of the existing thin-film transistor liquid crystal display, electrostatic breakdown often occurs at the intersection of the gate line (Gate Line) and the data line (Data Line), resulting in a short circuit between the data line and the gate line (Data- Gate Short, referred to as: DGS bad). Similarly, electrostatic breakdown often occurs at the intersection of the common electrode line (Common Line) and the data line (Data Line), resulting in a short circuit between the common electrode line and the data line (Data-Common Short, referred to as: DCS failure ) [0003] Such as figure 1 As shown, it is a schematic cross-sectional view of a cross-sectional structure of a gate line and a signal line of a pixel (the cross-section is along the direction of the signal ...

AI Technical Summary

Problems solved by technology

When the electrostatic breakdown of this parasitic capacitance occurs, it will lead to poor DGS

[0005] Of course, the above-mentioned short circuit problem caused by Electro-Static discharge (ESD for short) also exists between other signal transmission lines that may cross on the array substrate, such as between the common electrode line and the data line, the maintenance line, etc. The above phenomenon exists between the data line / gate line

[0006] For DGS and other line failures caused by ESD, the general method is to find the cause of static electricity on the equipment. In the prior art, the transmission speed of the rollers is reduced, the use of antistatic liquid is increased, and the static ion gun is added to reduce the static electricity. Input power in dry etching (Dry Etch) and other methods to solve the problem, but these cannot completely eliminate static electricity, resulting in the risk of line defects caused by ESD such as DGS and DCS.

Therefore, the pixel structure in the prior art does not provide any protective measures for at least the above-mentioned parasitic capacitance that is prone to electrostatic breakdown. Once it is broken down, it is difficult to completely repair it. Fix the problem of bad pixels, which will affect product quality and yield

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