Method for manufacturing a converter layer for a radiation detector
A radiation detector and manufacturing method technology, applied in radiation intensity measurement, radiation control device, conversion screen, etc., can solve problems such as power reduction, increase in manufacturing cost of converter layers or detector elements, etc., to improve quality and reduce manufacturing. cost effect
Inactive Publication Date: 2016-05-11
SIEMENS AG
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Problems solved by technology
Contamination and defect formation are often associated with such photolithographic methods, which make such converter layers or detector elements more expensive to manufacture and often less powerful (see for example "Photoresist Process Optimization for Defects Using a Rigorous Lithography Simulator" by Milof et al., IEEE1997, 57 -60 pages)
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[0046] figure 1 A converter layer 3 produced according to the invention with a pixelated first area 4 and an unstructured second area 5 is shown. A plurality of pixel elements A are arranged side by side on the pixelated first face. These pixel elements A preferably form an array with a regular structure. For this purpose, they can be arranged in columns and rows on the surface of the first side of the converter layer.
[0047] figure 2 An exemplary embodiment of a radiation detector 10 according to the invention is shown, which here is equipped with evaluation electronics 13 . To form a detector, a cathode 11 and a pixelated anode 12 (in Figure 4 Only a segment of a converter layer with fewer pixel elements A is shown in ) of the converter layer 3 according to the invention. The ionizing radiation to be detected, for example X-ray radiation R, strikes the cathode side of the radiation detector 10 here. However, the radiation detector according to the invention can bas...
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The invention relates to a method for manufacturing a plurality of converter layers (3) for a radiation detector (10), wherein each converter layer (3) includes a pixel structure with a pixel structure for applying a pixel electrode (12). A first side (4) and a second side for applying a counter-electrode (11), the manufacturing method comprising a step for one or more converter layers (3) having a structured first side (4). The step of growing the semiconductor crystal (54, 60) on the germ layer (50) in the crystal growth apparatus of the structure forming element (52). Furthermore, the invention relates to a converter layer (3) produced by the method as well as a radiation detector (10) and to medical technology having such a converter layer (3) or such a radiation detector (10). Equipment(20).
Description
technical field [0001] The invention relates to a production method for a radiation detector and a converter layer produced thereby, as well as a radiation detector and a medical technology device having such a converter layer. Background technique [0002] Radiation detectors, in particular direct conversion radiation detectors, enable quantitative and energy-selective detection of individual photons, such as high-energy radiation such as X-rays or gamma rays. In direct-conversion radiation detectors, the radiated photons respectively create free charged particles in the form of electron-hole pairs in a converter layer made of special semiconductor materials. Charged particle pairs (electron-hole pairs) generated by X-ray photons are accelerated towards the respective electrodes (electrons towards the anode, holes towards the cathode) by the application of an applied electric field and upon their arrival cause a pulse at each electrode which then By strengthening the elect...
Claims
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IPC IPC(8): H01L27/146H01L31/18H01L31/115G21K4/00G01T1/24
CPCH01L27/14676H01L27/14696
Inventor F.迪尔P.哈肯施迈德M.斯特拉斯伯格
Owner SIEMENS AG