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Method for manufacturing conversion layers for radiation detector

A technology for radiation detectors and manufacturing methods, applied in the directions of radiation intensity measurement, radiation control devices, conversion screens, etc., can solve the problems of power weakening, converter layer or detector element manufacturing cost increase, etc., to improve quality and reduce manufacturing cost effect

Inactive Publication Date: 2013-04-03
SIEMENS AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Contamination and defect formation are often associated with such photoplate methods, making such converter layers or detector elements more expensive to manufacture and often less powerful (see for example "Photoresist Process Optimization for Defects Using a Rigorous Lithography Simulator”, IEEE1997, pages 57-60)

Method used

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  • Method for manufacturing conversion layers for radiation detector
  • Method for manufacturing conversion layers for radiation detector
  • Method for manufacturing conversion layers for radiation detector

Examples

Experimental program
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Embodiment Construction

[0046] figure 1 A converter layer 3 produced according to the invention with a pixelated first area 4 and an unstructured second area 5 is shown. A plurality of pixel elements A are arranged side by side on the pixelated first face. These pixel elements A preferably form an array with a regular structure. For this purpose, they can be arranged in columns and rows on the surface of the first side of the converter layer.

[0047] figure 2 An exemplary embodiment of a radiation detector 10 according to the invention is shown, which here is equipped with evaluation electronics 13 . To form a detector, a cathode 11 and a pixelated anode 12 (in Figure 4 Only a segment of a converter layer with fewer pixel elements A is shown in ) of the converter layer 3 according to the invention. The ionizing radiation to be detected, for example X-ray radiation R, strikes the cathode side of the radiation detector 10 here. However, the radiation detector according to the invention can bas...

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Abstract

The present invention relates to a method for manufacturing number of conversion layers (3) for a radiation detector (10), wherein, each conversion layer (3) comprises a first surface (4) which is used for applying a pixel electrode (12) and has a pixel structure and a second surface for applying a counter electrode (11). The method comprises a growing step of semiconductor crystal (54,60) on an embryonal layer (50) in crystal growing equipment which is used for one or a plurality of conversion layers (3) with structured first surface (4) and is provided with a structure forming component (52). Furthermore the invention relates to the conversion layer (3) manufactured according to the method, a radiation detector (10) thereof, and a set of medical technical equipment (20) which is provided with the conversion layer (3) or the radiation detector (10).

Description

technical field [0001] The invention relates to a production method for a radiation detector and a converter layer produced thereby, as well as a radiation detector and a medical technology device having such a converter layer. Background technique [0002] Radiation detectors, in particular direct conversion radiation detectors, enable quantitative and energy-selective detection of individual photons, such as high-energy radiation such as X-rays or gamma rays. In direct-conversion radiation detectors, the radiated photons respectively create free charged particles in the form of electron-hole pairs in a converter layer made of special semiconductor materials. Charged particle pairs (electron-hole pairs) generated by X-ray photons are accelerated towards the respective electrodes (electrons towards the anode, holes towards the cathode) by the application of an applied electric field and upon their arrival cause a pulse at each electrode which then By strengthening the elect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L31/18H01L31/115G21K4/00G01T1/24
CPCH01L27/14676H01L27/14696
Inventor F.迪尔P.哈肯施迈德M.斯特拉斯伯格
Owner SIEMENS AG